A localized surface plasmon resonance and light confinement‐enhanced near‐infrared light photodetector

Lu, Rui; Ge, Cai-Wang; Zou, Yi-Feng; Zheng, Kun; Wang, Dandan; Zhang, Tengfei; Luo, Lin‐Bao

doi:10.1002/lpor.201500179

Cited by 50 publications

(36 citation statements)

References 51 publications

(50 reference statements)

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“…Comprehensive comparison of these key parameters finds that our PdSe 2 /GeNCs hybrid array IRPD is comparable to existing commercial IRPDs based on germanium. Although the specific detectivity is slightly lower than that of graphene/Ge nanoneedles array, the responsivity is better than other IRPDs devices composed of graphene/Ge wafer, PdSe 2 /Si wafer, graphene/Ge nanoneedles array, and graphene/Ge nanowires …”

Section: Resultsmentioning

confidence: 86%

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PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

Luo

Wang

Xie

et al. 2019

Adv Funct Materials

107

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In this study, a sensitive infrared photodetector (IRPD) composed of a germanium nanocones (GeNCs) array and PdSe2 multilayer is presented, which is obtained by a straightforward selenization approach. The as‐assembled PdSe2/GeNCs hybrid heterojunction exhibits obvious photovoltaic behavior to 1550 nm illumination, which renders the IRPD a self‐driven device without external power supply. Further device analysis reveals that the PdSe2/GeNCs hybrid based IRPD exhibits high sensitivity to 1350, 1550, and 1650 nm illumination with excellent stability and reproducibility. The responsivity and external quantum efficiency is as high as 530.2 mA W−1 and 42.4%, respectively. Such a relatively good device performance is related to the strong light trapping effect of GeNCs array, according to the theoretical simulation based on finite‐difference time‐domain. It is also found that the IRPD shows an abnormal sensitivity to IR illumination with a wavelength of 2200 nm. Finally, the present individual IRPD can also record the simple “F” image produced by 1550 nm, suggesting the promising application of the PdSe2/GeNCs hybrid device in future infrared optoelectronic systems.

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Section: Resultsmentioning

confidence: 86%

“…Here, P x , P y , H , D , and t denote the x ‐ and y ‐direction period, height and bottom diameter of the Ge cone, and thickness of PbSe 2 film, respectively. The dielectric constant of Ge and PbSe 2 was chosen.…”

Section: Methodsmentioning

confidence: 99%

PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

Luo

Wang

Xie

et al. 2019

Adv Funct Materials

107

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“…Lu et al successfully covered a germanium nanoneedle (GeNN) array with single‐layered graphene (SLG) as a Schokttky‐junction photodetector on which heavily Sn‐doped ITO NPs were decorated for performance optimization . The heavily doped ITO NPs were synthesized by a reflux method in oleylamine, in which the doping level of Sn was controlled by tuning the In/Sn atomic ratios.…”

Section: Ld Plasmonic Photodetectors Based On Metal Npsmentioning

confidence: 99%

“…Nonetheless, plasmonic materials are not limited to conventional noble metals. Some heavily doped semiconductors, for example, indium tin oxide (ITO) NPs or Cu 3− x P, can induce obvious LSPs under illumination of near‐infrared light, and therefore they are used to enhance near‐infrared photodetectors . Although most plasmonic devices are enhanced by the electric field of the SPP and LSP modes, other mechanisms, such as leaky‐mode resonances and plasmonic hot‐electron injection, are found to be responsible for the high performance of nanocone photodetectors and of Schottky‐junction‐based photodetectors .…”

Section: Introductionmentioning

confidence: 99%

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Huang

Luo

2018

Advanced Optical Materials

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to these characteristics, LD photodetectors based on atomically thin 2D materials (e.g., graphene, MoS 2 , WS 2 , etc.), [3][4][5][6][7] 1D semiconductor nanowires (e.g., ZnO, Si, GaN, SnO 2 , etc.), [8] and 0D QDs (such as the PbS QD layer, the HgTe QD layer, and the InAs QDs in quantum wells) [9][10][11][12] are at the forefront of photodetector research for their competitive device performance in terms of higher responsivity, high photoconductive gain, and fast response speed. While the downscaling of devices hastens the electrical signal due to the short length of the electron transport, the small volume of the LD photodetectors also suffers from low absorption of light, e.g., 2.3% for single-layer graphene. [13] Surface plasmon polariton (SPP) is light-excited collective oscillation of free electrons on an interface between a metal layer and a dielectric medium such as air. [14] Under the SPP mode, the electromagnetic energy of light excitation is converted to the energy of an electromagnetic wave on the interface that exhibits characteristics of both the photons and the electrons. Therefore, the SPP mode can confine incident light on the surface of the metal layer below the diffraction limit, and propagate along the surface. Owing to the confinement, the SPP electromagnetic field could be enhanced by up to 10 5 . [15] This provides a promising solution to the dilemma of LD photodetectors and therefore are widely used in thin-film plasmonic optoelectronic devices. [16] However, excitation of SPPs on the metal layers is conditional and normally entails a special excitation setup, such as gold film-coated prism, to meet momentum conservation requirements, and therefore its use in LD photodetectors is limited. In contrast, localized surface plasmons (LSPs) can be excited by direct illumination on metal nanostructures, such as metal nanoparticles (NPs). Compared to SPP, LSP is confined on the NP surface without propagation, and its enhancement depends on NP size and geometry. [17] Thus, well-developed fabrication methods of metal nanostructures have rendered LSPs a dominant technology for boosting the device performance of LD photodetectors in recent years. [18] As the photodetector materials change from bulk or thin film to the LD ones, plasmonic materials also evolve for optimized enhancement depending on the dimensions of the photo detectors of interests. Silver nanowires are deposited on a 2D MoS 2 as an SPP photodetector. [2] Gold NPs are deposited on 1D nanowire as an LSP-enhanced photodetector. [19] Perforated nanohole arrays are made on a gold film to directly excite Plasmonic nanostructures can achieve subdiffraction-limit light confinement with enhanced electric fields. By taking advantage of the light-confinement effect, various plasmonic photodetectors that combine low-dimensional (LD) semiconductor structures and plasmonic materials have recently demonstrated excellent plasmon-enhanced device performance and attracted significant research interest. In this review, the state-of-the-art progress in...

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“…However, the weak absorption and high recombination rate of graphene restricted its practical application. To enhance the absorption and prolong the lifetime of photon‐induced carriers, quantum dots, metal nanoparticles, perovskites, and 2D transition metal sulfide have been applied on photodetectors to improve their responsive performance. At the same time, more trapped states induced by quantum dots or poor interface between graphene and adjacent layers could drag the response time of the detectors dramatically to milliseconds or even seconds .…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect

Yan

Huang

et al. 2018

Advanced Optical Materials

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2D transition metal sulfide [21][22][23][24] have been applied on photodetectors to improve their responsive performance. At the same time, more trapped states induced by quantum dots or poor interface between graphene and adjacent layers could drag the response time of the detectors dramatically to milliseconds or even seconds. [25] Whereas, Gr/Si photoconductors have shown high performance both in terms of responsivity and response time due to the strong builtin electric field and excellent contact condition. [26][27][28] However, these devices still need further optimization. In a recent report, Au NP arrays were transferred onto the top of a Gr/Si device to induce synergistic effects of plasmonics, which effectively enhanced its responsivity in the infrared region. [27] However, building regular arrays of noble metals often require a lift-off process, which is complex and expensive. Considering these limitations, colloidal noble metal nanoparticles synthesized by a scalable wet chemical process can prove to be a suitable substitute.Among various colloidal noble metal nanoparticles, platinum nanoparticles (Pt NPs) are good choice for enhancing the performance of the photodetectors as they are capable of generating localized surface plasmon resonance (LSPR). [29] Also, the high work function of Pt makes it an effective donor of holes in graphene, resulting in a lowering of Fermi level. In our previous work, it has been demonstrated that the performance of Gr/Si solar cells can be improved significantly with Pt cubic NPs coupling. [30] In this work, we fabricated a Gr/Si photodetector with ultrahigh responsivity and very fast photoresponse after introducing random Pt NPs on top of graphene by means of a simple drop-casting method. Strong and stable plasma effects were generated to enhance the absorption ability of both graphene and silicon. The high work function of Pt helped in generating a stronger built-in electric field to facilitate separation of carriers. Driven by these mechanisms, responsivity of our device could reach up to 1.68 × 10 7 AW −1 in the visible range, which is over an order of magnitude higher than a pristine one. While at the same time, the device exhibited a response time of around 180 ns, which is an exceptional value obtained so far compared to the other graphene-based photoconductors at this wavelength. [17,21,27] These results provide a facile and effective approach for the fabrication of high-performance Gr/Si photodetectors.Graphene/silicon (Gr/Si) photodetectors have attracted much attention recently for their simple fabrication and satisfactory performance. However, the responsivity is relatively low compared to other visible detectors. Herein, plasma effects are induced to enhance the photon absorption by covering random platinum nanoparticles (Pt NPs) on top of the devices. Consequently, a stronger built-in electric field in the Gr/Si photodetectors is generated due to the high work function of Pt. Their responsivity can reach up to 1.68 × 10 7 AW −1 , which is one order of magni...

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A localized surface plasmon resonance and light confinement‐enhanced near‐infrared light photodetector

Cited by 50 publications

References 51 publications

PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect

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A localized surface plasmon resonance and light confinement‐enhanced near‐infrared light photodetector

Cited by 50 publications

References 51 publications

PdSe2 Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

PdSe2 Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect

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Product

Resources

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PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application

PdSe₂ Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application