A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga O ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.

Nanophosphors of normalY3Al5normalO12∕Ce3+ (YAG/Ce) were synthesized with a novel salted sol-gel (SSG) method in which a water solution of inorganic salt, yttrium nitrate [ Y(NnormalO3)3 , YNO], was used with a traditional metal alkoxide precursor, aluminum sec-butoxide [ Al(OnormalC4normalH9)3 , ASB], in sol-gel synthesis. With the SSG method, a YAG single phase could be obtained by sintering the dry gel of normalAl2normalO3 and normalY2normalO3 mixture for 2h at 800°C . The YAG particle size was in a range from 30to100nm . Luminescence properties of the YAG samples with different Ce3+ doping concentrations were studied. The peak intensity of luminescence was found at 4% Ce3+ doping concentration. Red shift of the emission peaks was observed when the doping concentration was increased.

We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlOxpassivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.

Light manipulation is paramountly important to the fabrication of high‐performance optoelectronic devices such as solar cells and photodetectors. In this study, a high‐performance near‐infrared light nanophotodetector (NIRPD) was fabricated based on a germanium nanoneedles array (GeNNs array) with strong light confining capability, and single‐layer graphene (SLG) modified with heavily doped indium tin oxide nanoparticles (ITONPs), which were capable of inducing localized surface plasmon resonance (LSPR) under NIR irradiation. An optoelectronic study shows that after modification with ITONPs the device performance including photocurrent, responsivity and detectivity was considerably improved. In addition, the ITONPs@SLG/GeNNs array NIRPD was able to monitor fast‐switching optical signals, the frequency was as high as 1 MHz, with very fast response rates. Theoretical simulations based on finite‐element method (FEM) revealed that the observed high performance was not only due to the strong light‐confining capability of the GeNNs array, but also due to the plasmonic ITONPs‐induced hot electron injection. The above results suggest that the present NIRPD will have great potential in future optoelectronic devices application.

In this work, we present a plasmonic photodetector (PPD) with high sensitivity to red light illumination. The ultrasensitive PPD was composed of high-crystalline CdSe nanoribbons (NRs) decorated with plasmonic hollow gold nanoparticles (HGNs) on the surface, which were capable of coupling the incident light due to localized surface plasmon resonance (LSPR). Device analysis reveals that after modification of HGNs, both responsivity and detectivity were considerably improved. Further device performance analysis and theoretical simulation based on finite element method (FEM) find that the optimized performance is due to HGNs induced localized field enhancement and direct electron transfer.

In this work, Si 3 N 4 powders containing~88% by weight of aphase were prepared by adopting a facile yet efficient combustion synthesis strategy under a nitrogen pressure of 6 MPa. A unique radial-spheroidal cluster morphology was strikingly observed in the as-fabricated Si 3 N 4 products. More significantly, a three-step growth mechanism was rationally proposed herein based on quenching experiments and thermo-kinetic calculations. As concluded, both the combustion temperature achieved and the sustaining time in high-temperature period played significant roles in obtaining silicon nitride powders with controlled high contents of a-phase Si 3 N 4 .

A high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi 2 S 3 nanoribbon (NR) photodetector was fabricated for green light detection (560 nm).

In this work, we present a plasmonic near infrared light photodetector for the detection of 980 nm illumination. The plasmonic photodetector is fabricated by modifying single layer graphene (SLG)/InP Schottky junction diode with SiO2 encapsulated gold nanorods (SiO2@AuNR), which can confine the incident NIR light by inducing obvious localized surface plasmon resonance, according to theoretical simulation based on finite element method. This study shows that after decoration with plasmonic SiO2@AuNR, the device performance in terms of photocurrent and responsivity is considerably enhanced. In addition, the device exhibited a very fast respose rate which is able to monitor switching optical signals with a frequency as high as 1 MHz, suggesting a potential application for sensing high‐frequency optical signals. This study manifests that the present plasmonic NIR photodetector will have great potential in future optoelectronic devices application.