Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices

Wang, Li; Chen, Ran; Ren, Zhi-Fei; Ge, Cai-Wang; Liu, Zhenxing; He, Shu-Juan; Yu, Yongqiang; Wu, Chunyan; Luo, Lin‐Bao

doi:10.1088/0957-4484/27/21/215202

Cited by 21 publications

(14 citation statements)

References 42 publications

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“…The stepwise process for the construction of the ZnSe nanowire/Si heterojunction is shown in the Figure 8. Many other heterojunctions were fabricated based on the above constructions method, such as ZnSe nanoribbon/Si nano-heterojunction [45], CdS:Ga nanoribbon/Si heterojunctions [46], n-CdSe nanowire/p + -Si substrate heterojunction [47], p-ZnS nanoribbon/n-Si heterojunction [48], p-CdS nanoribbon/n-Si heterojunctions [49], n-CdS nanowire/p + -Si substrate hybrid p-n junction [50], ZnSe nanowire array/Si p-n heterojunctions [51], ZnSe nanowire/Si p-n heterojunctions [52], and so on. Furthermore, Xie et al firstly used a Ag-assisted chemical etching method to obtain patterned SiNWs array at particular area on the silicon substrate (Figure 9a).…”

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

“…Moreover, ZnSe nanowire/Si p-n junction [44], p-ZnSe nanowire array/Si p-n heterojunctions [51], and single ZnSe nanowire/Si p-n heterojunction [52] were achieved based on the configuration of one-dimensional nanostructures and Si substrates, and presented conversion efficiency of ~2.87%, 1.04%, and 1.8%, respectively. To improve the devices' performance, Wang et al modified Ag nanoparticles on the ZnSe nanoribbon/Si p-n heterojunction and made the photovoltaic performance improve dramatically compared to the device without a Ag nanoparticle, as shown in Figure 11 [45]. It is considered that the enhanced light absorption and electric field strength of the ZnSe nanoribbons modified with Ag nanoparticles by localized surface plasmon resonance could lead to more electron-hole pairs generation and improve the conversion efficiency.…”

Section: Solar Cellsmentioning

confidence: 99%

“…It should be pointed out that the nanoscale p-n junction shows visible-blind sharp UV response which is benefitted from the high-quality ZnO and GaN materials and the nanoscale device feature. On the other hand, Wang et al fabricated ZnSe nanoribbon/Si p-n heterojunction photodetector [45]. To improve its performance, Ag nanoparticles were modified onto the ZnSe nanoribbon/Si p-n heterojunction device ( Figure 13).…”

Section: Photodetectorsmentioning

confidence: 99%

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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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Abstract:Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

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Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

Section: Solar Cellsmentioning

confidence: 99%

Section: Photodetectorsmentioning

confidence: 99%

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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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“…Not only the MNP diameters, but also the core–shell structures of the MNPs can be accurately controlled, Colloidal Au NPs are usually synthesized by reduction of HAuCl 4 solution in alcohol, while colloidal Ag NPs can be obtained by citrate reduction of AgNO 3 aqueous solution. By further adsorbing the colloidal MNPs on single 1D semiconductor materials in solution phase, Luo and co‐workers achieved a 1D plasmonic photodetector with band‐edge absorption wavelengths from the UV to near‐infrared regions, including Cl‐doped ZnS (λ bandgap = 365 nm), ZnSe (λ bandgap = 480 nm), ZnTe (λ bandgap = 539 nm), CdSe (λ bandgap = 729 nm), Si nanorods (λ bandgap = 850 nm), and Bi 2 S 3 (λ bandgap = 953 nm) . Details of their enhanced performance are given in Table 1 .…”

Section: Ld Plasmonic Photodetectors Based On Metal Npsmentioning

confidence: 99%

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Huang

Luo

2018

Advanced Optical Materials

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to these characteristics, LD photodetectors based on atomically thin 2D materials (e.g., graphene, MoS 2 , WS 2 , etc.), [3][4][5][6][7] 1D semiconductor nanowires (e.g., ZnO, Si, GaN, SnO 2 , etc.), [8] and 0D QDs (such as the PbS QD layer, the HgTe QD layer, and the InAs QDs in quantum wells) [9][10][11][12] are at the forefront of photodetector research for their competitive device performance in terms of higher responsivity, high photoconductive gain, and fast response speed. While the downscaling of devices hastens the electrical signal due to the short length of the electron transport, the small volume of the LD photodetectors also suffers from low absorption of light, e.g., 2.3% for single-layer graphene. [13] Surface plasmon polariton (SPP) is light-excited collective oscillation of free electrons on an interface between a metal layer and a dielectric medium such as air. [14] Under the SPP mode, the electromagnetic energy of light excitation is converted to the energy of an electromagnetic wave on the interface that exhibits characteristics of both the photons and the electrons. Therefore, the SPP mode can confine incident light on the surface of the metal layer below the diffraction limit, and propagate along the surface. Owing to the confinement, the SPP electromagnetic field could be enhanced by up to 10 5 . [15] This provides a promising solution to the dilemma of LD photodetectors and therefore are widely used in thin-film plasmonic optoelectronic devices. [16] However, excitation of SPPs on the metal layers is conditional and normally entails a special excitation setup, such as gold film-coated prism, to meet momentum conservation requirements, and therefore its use in LD photodetectors is limited. In contrast, localized surface plasmons (LSPs) can be excited by direct illumination on metal nanostructures, such as metal nanoparticles (NPs). Compared to SPP, LSP is confined on the NP surface without propagation, and its enhancement depends on NP size and geometry. [17] Thus, well-developed fabrication methods of metal nanostructures have rendered LSPs a dominant technology for boosting the device performance of LD photodetectors in recent years. [18] As the photodetector materials change from bulk or thin film to the LD ones, plasmonic materials also evolve for optimized enhancement depending on the dimensions of the photo detectors of interests. Silver nanowires are deposited on a 2D MoS 2 as an SPP photodetector. [2] Gold NPs are deposited on 1D nanowire as an LSP-enhanced photodetector. [19] Perforated nanohole arrays are made on a gold film to directly excite Plasmonic nanostructures can achieve subdiffraction-limit light confinement with enhanced electric fields. By taking advantage of the light-confinement effect, various plasmonic photodetectors that combine low-dimensional (LD) semiconductor structures and plasmonic materials have recently demonstrated excellent plasmon-enhanced device performance and attracted significant research interest. In this review, the state-of-the-art progress in...

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“…72,73 Jiang et al successfully produced ZnSe NRs using laser ablation of ZnSe pressed-powders. 74 Their experiments on the characterization of ZnSe-NRs revealed that it has a perfect wurtzite-2H single-crystal structure.…”

Section: B Mono-selenide Nrs: Znse and Snsementioning

confidence: 99%

Nanoribbons: From fundamentals to state-of-the-art applications

Yagmurcukardes

Peeters

Senger

et al. 2016

Applied Physics Reviews

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Atomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magnetic properties, and edge-dependent thermoelectric performance of NRs of MoS 2 and WS 2 are discussed. Then, strongly anisotropic properties, growth-dependent morphology, and the weakly width-dependent bandgap of ReS 2 NRs are summarized. Next we discuss TMDs having a T-phase morphology such as TiSe 2 and stable single layer NRs of mono-chalcogenides. Strong edge-type dependence on characteristics of GaS NRs, width-dependent Seebeck coefficient of SnSe NRs, and experimental analysis on the stability of ZnSe NRs are reviewed. We then focus on the most recently emerging NRs belonging to the class of transition metal trichalcogenides which provide ultra-high electron mobility and highly anisotropic quasi-1D properties. In addition, width-, edge-shape-, and functionalization-dependent electronic and mechanical properties of blackphosphorus, a monoatomic anisotropic material, and studies on NRs of group IV elements (silicene, germanene, and stanene) are reviewed. Observation of substrate-independent quantum well states, edge and width dependent properties, the topological phase of silicene NRs are reviewed. In addition, H 2 concentration-dependent transport properties and anisotropic dielectric function of GeNRs and electric field and strain sensitive I-V characteristics of SnNRs are reviewed. We review both experimental and theoretical studies on the NRs of group III-V compounds. While defect and N-termination dependent conductance are highlighted for boron nitride NRs, aluminum nitride NRs are of importance due to their dangling bond, electric field, and strain dependent electronic and magnetic properties. Finally, superlattice structure of NRs of GaN/AlN, Si/Ge, G/BN, and MoS 2 /WS 2 is reviewed. Published by AIP Publishing.

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Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices

Cited by 21 publications

References 42 publications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Low‐Dimensional Plasmonic Photodetectors: Recent Progress and Future Opportunities

Nanoribbons: From fundamentals to state-of-the-art applications

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