The problem of obtaining ohmic contacts for p-type ZnSe is related to the deep valence band of ZnSe. We have addressed this problem by employing an epitaxial layer of the semimetal HgSe to decrease the interfacial energy barrier, or valence band offset, to about 0.6 eV. This has resulted in improved ohmic contacts for p-type ZnSe films and related diode structures.
We report the successful fabrication of ZnSe p-n junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively.
We report the first demonstration of ZnSe metal-semiconductor field-effect transistors. These new devices were fabricated from n-type Cl-doped epitaxial ZnSe layers grown by molecular beam epitaxy on (100) oriented semi-insulating Cr-doped GaAs substrates. Epitaxial layers with room-temperature carrier concentrations of 1.6×1017 cm−3 and electron mobilities ranging from 400 to 500 cm2/V s were used for device fabrication. Au was used as a Schottky gate contact. Either In or a multilevel metallization scheme using Cr and In was employed for the source and drain ohmic contacts. Depletion-mode transistor operation was observed for structures with 5 and 100 μm gate lengths and varying gate widths. The 5 μm gate length by 200 μm gate width device structures exhibited transconductances of 0.5 mS/mm.
Properties of blue and blue-green laser diodes with ZnCdSe single- and multiple-quantum-well active regions are discussed. Blue, blue-green, and green light emitting diodes which employ ZnCdSe or ZnSTeSe as the active region of double heterostructure devices have also been prepared and tested. Properties of ZnS-ZnSSe and ZnS-ZnCdS quantum well structures are also reported. These structures emit intense photoluminescence in the ultraviolet spectral region.
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