High-resolution study of stimulated emission from blue-green laser diodes

Yu, Zhenxin; Ren, Jing; Sneed, B.; Bowers, Karen; Gossett, K. J.; Boney, C.; Lansari, Y.; Cook, J. W.; Schetzina, J. F.; Hua, G. C.; Ōtsuka, N.

doi:10.1063/1.107613

Cited by 28 publications

(3 citation statements)

References 22 publications

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“…Due to its wide band gap, ZnSe has been a promising material for the development of blue-light lasers. [1][2][3] For the development of new materials the knowledge of their electronic structure is most important. X-ray emission spectroscopy ͑XES͒ offers an ideal experimental tool for the investigation of semiconductors and insulators because of the absence of the charging effects.…”

Section: Introductionmentioning

confidence: 99%

K-emission spectra of Zn, ZnS, and ZnSe within dipole and quadrupole approximations

et al. 1998

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The present work deals with the x-ray K␤ 2,5 -emission bands and the electronic structures of Zn metal as well as ZnS and ZnSe compounds. The above-mentioned compounds were chosen the subject of the investigation because they are ideal materials to study the 3d-4 p hybridization since the Zn d band is about 10 eV below the Fermi level and therefore the K␤ 2 and K␤ 5 spectra are quite well separated from each other. The K␤ 5 spectra of ZnS and ZnSe compounds are found to be largely caused by the quadrupole radiation. The electronic structures of the investigated materials are obtained by using the linear muffin-tin orbital method. The calculations show that for cubic crystals the quadrupole spectra can have a strong polarization dependence although the dipole spectra are independent of polarization. The theoretical spectra of the investigated materials are treated in the framework of the full band-structure representation.

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Section: Introductionmentioning

confidence: 99%

K-emission spectra of Zn, ZnS, and ZnSe within dipole and quadrupole approximations

et al. 1998

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“…temperatures. 7 Blue laser diodes with outputs at 485 nm ͑2.553 eV͒ at 77 K have also been fabricated using the same basic SCH structure, but with less Cd in the ZnCdSe quantum well. Laser emission near room temperature was also briefly observed but not recorded.…”

Section: Resultsmentioning

confidence: 99%

“…The laser diode structure employed is a p-on-n separate confinement heterostructure ͑SCH͒ as shown in Fig. 7 The cleaved facets of the devices were uncoated. It consists of ϳ0.8 m thick ZnMgSSe cladding layers ͑E g ϳ3.0 eV͒ latticematched to ZnSe, ϳ0.1 m thick ZnSe light guiding layers, and a single 60-200-Å-thick pseudomorphically strained ZnCdSe quantum well.…”

Section: Methodsmentioning

confidence: 99%

II–VI blue/green laser diodes on ZnSe substrates

Boney

Rowland

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Double injection and negative resistance in stripe-geometry oxide-aperture Al y Ga1−y As-GaAs-In x Ga1−x As quantum well heterostructure laser diodes Molecular beam epitaxy growth and characterizations of (Zn, Mg)(S,Se) epilayers for II-VI blue/green laser diodes J.This article reports the first blue/green laser diodes grown on ZnSe substrates. The laser structure employed is a p-on-n separate confinement heterostructure consisting of 0.8-m-thick ZnMgSSe cladding layers lattice-matched to ZnSe, 0.1-m-thick ZnSe light guiding layers, and a single 60-200-Å-thick ZnCdSe quantum well. Green laser emission ͑507-517 nm; 2.443-2.394 eV͒ was observed at temperatures from 77-220 K using cw excitation at 77 K and pulsed excitation ͑50 ns; 10 Ϫ1 -10 Ϫ4 duty cycle͒ at higher temperatures. Blue laser diodes with outputs at 485 nm ͑2.553 eV͒ at 77 K have also been fabricated and tested.

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