ZnSe light-emitting diodes

Abstract

We report the successful fabrication of ZnSe p-n junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively.

Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

“…CdSe is an important II-VI semiconductor compound martial with potential applications in low cost electronic and optoelectronics devices such as solar cell [1], photoconductors [2], thin film transistors [3], light emitting diodes [4], biomedical imaging devices [5] and laser diodes [6]. It is a narrow band semiconductor and its band gap energy is found to be 1.74 [7].…”

The electrical transportation and carrier behavior of ZnSe under high pressure

“…Because of many technical applications in blue laser generation, fabricate lightemitting diodes and photovoltaic solar cells, [1][2][3] ZnSe has attracted broad attentions. Since Samara and Drickamer found a drastic change in the electrical resistance under high pressure condition, [4] there have been many investigations into the high pressure behavior of ZnSe.…”

Physical properties of ZnSe films prepared by two-source evaporation and a study of post doping effect

“…Fabrication of ZnSe LEDs requires the formation of p-n junctions through controlled substitutional doping [2]. Because of wide band gap and transparency over a wide range, ZnSe is also suitable as window layer for thin films solar cells [10,11].…”

“…ZnSe is one of the group II-VI semiconductors and it has a direct optical band gap of $2.7 eV, which makes it suitable material for variety of the optoelectronics applications in the blue-green wavelength region, including light emitting diodes and lasers [1][2][3][4][5][6][7][8][9]. Fabrication of ZnSe LEDs requires the formation of p-n junctions through controlled substitutional doping [2].…”