Influence of heat treatment on the structural, optical and electrical properties of Cd20Sn10Se70 thin films

Abdelgaied, Abdellatif; Mahfoz-Kotb, H.; Hafiz, M.M.; Dabban, M.A.

doi:10.1016/j.mssp.2014.10.027

Cited by 22 publications

(1 citation statement)

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“…This points out that a significant improvement in the crystallinity degree of the thin ZnGa2S4 films. The literature of similar works shows that the obtained results have the same trend [66][67][68]. Further, these results have already been affirmed from XRD findings.…”

Section: Urbach Energysupporting

confidence: 79%

Comparative Studies for Determining the Optical Band-gap Energy of the Novel Polycrystalline Thin Znga2s4 Films Sprayed at Different Film Thicknesses

Hassanien

Akl

Radaf

2021

Preprint

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This article has dedicated to studying some structural features and optical characteristics of the Novel polycrystalline ZnGa2S4 (ZGS) thin films utilizing spray pyrolysis process at different thicknesses (293, 375, 452, and 517nm). The microstructural properties and crystal defects of these films have been studied in previous work. While in this work, the crystallinity degree and crystalline volume fraction have been studied using X-ray diffractograms. The stoichiometry of these ZnGa2S4 films has been checked using the energy dispersive x-ray analysis. The field-emission-scanning-electron microscope has been utilized to investigate the morphology of ZGS films' surfaces. Optical properties have been studied via transmittance and reflectance spectra in the range 300nm - 2500nm. Some important optical parameters such as absorption coefficient, skin depth, Urbach's energy, steepness parameters, and electron-phonon interactions have been extensively studied. The direct and indirect gap energy were determined by different four models and compared with Tauc’s model. Optical data analysis revealed that; all studied properties are strongly dependent on the film thickness. The optical band gap values were slightly decreased from 3.7eV to 4.1eV with increment of the film thickness owing to improving the crystallization process. These obtained results confirm that these films are wide band gap semiconductors, which makes them recommended for use in many solar cell applications as a window layer.

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Section: Urbach Energysupporting

confidence: 79%