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We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC

This research work describes the phase change studies in Se85In15−xZnx thin films at various annealing temperatures. Glassy samples of Se85In15−xZnx were synthesized by the melt quenching method and thin films of thickness 400 nm were prepared by the vacuum evaporation technique on a glass/Si wafer substrate. The glass transition temperature (Tg) and the on-set crystallization temperature (Tc) of the prepared alloys were evaluated by non-isothermal differential scanning calorimetry studies. Thin films were annealed at three temperatures 330 K, 340 K, and 350 K (which are in between Tg and Tc of the synthesized samples) in a vacuum furnace for 2 h. High resolution X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature whereas the annealed films are of crystalline/polycrystalline in nature. Field emission scanning electron microscopy studies of thin films (as-deposited and crystallized) confirm the phase transformation in Se85In15−xZnx thin films. Optical band gaps were calculated from the Tauc's extrapolation procedure and were found to be enhanced with the Zn concentration and decrease with the increasing annealing temperature. Various optical parameters were evaluated for as-prepared and annealed Se85In15−xZnx thin films. The changes in optical parameters with annealing temperature were described on the basis of structural relaxation as well as changes in defect states and density of localized states during amorphous to crystalline phase transformation in Se85In15−xZnx thin films.

Working within the framework of the Coulomb modified Glauber model we fit the elastic differential scattering cross section of 240 MeV α particle on 58 Ni using the effective N -α amplitude with one adjustable parameter. It is found that once the effective amplitude is calibrated on 58 Ni by varying the adjustable parameter, it very nicely reproduces the available elastic α scattering data on other nuclei at the same energy.

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A phenomenological method of analysis for heavy-ion elastic scattering data at intermediate energies is proposed within the framework of the optical limit approximation of the Glauber multiple scattering theory. The essential point of our method is to evaluate the NN scattering amplitude in terms of a phenomenological effective NN potential the parameters of which are varied to fit the experimental data. It is applied to analyze 12C–12C elastic scattering data in the energy range of 25–200 MeV/nucleon with a good degree of success.

We report the synthesis of amorphous (PbSe)100−xCdx (x = 5, 10, 15, and 20) nanoparticle thin films using thermal evaporation method under argon gas atmosphere. Thin films with a thickness of 20 nm have been deposited on glass substrates at room temperature under a continuous flow (50 sccm) of argon. X-ray diffraction patterns suggest the amorphous nature of these thin films. From the field emission scanning electron microscopy images, it is observed that these thin films contain quite spherical nanoparticles with an average diameter of approximately 20 nm. Raman spectra of these a-(PbSe)100−xCdx nanoparticles show a wavelength shift in the peak position as compared with earlier reported values on PbSe. This shift in peak position may be due to the addition of Cd in PbSe. The optical properties of these nanoparticles include the studies on photoluminescence and optical constants. On the basis of optical absorption measurements, a direct optical bandgap is observed, and the value of the bandgap decreases with the increase in metal (Cd) contents in PbSe. Both extinction coefficient (k) and refractive index (n) show an increasing trend with the increase in Cd concentration. On the basis of temperature dependence of direct current conductivity, the activation energy and pre-exponential factor of these thin films have been estimated. These calculated values of activation energy and pre-exponential factor suggest that the conduction is due to thermally assisted tunneling of the carriers.