We present a fast, highly sensitive, and efficient potentiometric glucose biosensor based on functionalized InN quantum-dots (QDs). The InN QDs are grown by molecular beam epitaxy. The InN QDs are bio-chemically functionalized through physical adsorption of glucose oxidase (GOD). GOD enzyme-coated InN QDs based biosensor exhibits excellent linear glucose concentration dependent electrochemical response against an Ag/AgCl reference electrode over a wide logarithmic glucose concentration range (1 x 10(-5) M to 1 x 10(-2) M) with a high sensitivity of 80mV/decade. It exhibits a fast response time of less than 2 s with good stability and reusability and shows negligible response to common interferents such as ascorbic acid and uric acid. The fabricated biosensor has full potential to be an attractive candidate for blood sugar concentration detection in clinical diagnoses. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758701]
We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC
We report on the direct growth of high-In-composition InGaN layers on Si(111) by plasma-assisted molecular beam epitaxy without any buffer layers. In a narrow window of growth conditions, laterally extended, micrometer-sized planar areas are formed together with trenches and holes. Detailed structural and optical analyses reveal that the planar areas comprise the InGaN layer with high and uniform In composition, while the trenches and holes are associated with pure GaN and low-In-composition InGaN. Photoluminescence at low temperature is observed from the high-In-composition InGaN layer, which forms an ohmic contact with a p-Si substrate.
We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline nature of the InGaN nanowall network, oriented along the C-axis, with In composition ranging from pure GaN to 40%. Room temperature photoluminescence is observed, indicating good optical quality. The nanowall network is highly in-plane electrically conductive.
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