First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si

Abstract

We report on the direct growth of high-In-composition InGaN layers on Si(111) by plasma-assisted molecular beam epitaxy without any buffer layers. In a narrow window of growth conditions, laterally extended, micrometer-sized planar areas are formed together with trenches and holes. Detailed structural and optical analyses reveal that the planar areas comprise the InGaN layer with high and uniform In composition, while the trenches and holes are associated with pure GaN and low-In-composition InGaN. Photoluminescence at low temperature is observed from the high-In-composition InGaN layer, which forms an ohmic contact with a p-Si substrate.

Radiation-induced alloy rearrangement in InxGa1−xN

“…6,7 Despite the lattice mismatch with Si and induced cracking and high dislocation density, several successful attempts to grow In x Ga 1Àx N/Sibased structures have been declared. [8][9][10] Leaving the expectations aside, surprisingly little is known about defect structure in In x Ga 1Àx N alloys. So far, inhomogeneous indium distribution, dislocations, and surfacerelated defects have been reported.…”

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

“…Very few groups have reported studies on isotype heterojunctions of In x Ga 1Àx N system. 8,9 The replacement of toxic elements, such as arsenic and antimony with nitrogen and the tunability of this system from near infrared (for x ¼ 1) to ultraviolet region (for x ¼ 0), gives it an edge over the other material systems for high speed optoelectronic applications. Nevertheless, the large lattice mismatch of InGaN with silicon substrates has hindered the realization of silicon based commercial devices and is limited to sapphire which happens to be an insulator.…”

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

“…Hence, the direct growth on Si substrates is the ultimate goal, allowing for device designs such as InGaN/Si tandem solar cells and vertical contact schemes at much lower cost and for the direct integration with existing Si technology. Along this line, we have already reported the growth of thick and uniform high-In-content InGaN layers on Si by either strongly promoting growth selectivity (the separation of low-and high-In-content regions) producing micron-sized atomically flat In-rich regions 15 or by the suppression of growth selectivity at lower temperature resulting in undulated, chemically uniform InGaN layers 16 with high optical quality.…”