The problem of obtaining ohmic contacts for p-type ZnSe is related to the deep valence band of ZnSe. We have addressed this problem by employing an epitaxial layer of the semimetal HgSe to decrease the interfacial energy barrier, or valence band offset, to about 0.6 eV. This has resulted in improved ohmic contacts for p-type ZnSe films and related diode structures.
The introduction of phosphorus and arsenic dopants into bulk Cd! x Mn~ Te crystals grown by the Bridgman-Stockbarger technique has been studied with respect to the resulting electrical and optical properties. Uncompensated acceptor concentrations as high as 10 15 _10 16 cm--3 are obtained. Samples with a Mn composition in the range 0.10
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