We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1−xInxSb- InAs-Ga1−xAlxSb Type-II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement.
We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.
We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties.
Direct measurement of surface recombination velocity has been achieved for n-InP, p-InP, and n-GaAs by a novel technique which is based on picosecond optical resolution of a transient diffraction grating, formed by an excess electron-hole plasma near the surface of the semiconductor. The influence of diffusion, bulk recombination, and surface recombination on the carrier density are included in the analysis of the experiment, which shows that the method is specifically sensitive to surface recombination velocity. Effects of the plasma density on the diffusion coefficient and the carrier lifetime are discussed.
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