Semimetal-to-semiconductor transition in bismuth thin films

Hoffman, C. A.; Meyer, J. R.; Bartoli, F. J.; Venere, Almerinda Di; Yi, Xiaoou; Hou, Chao; Wang, H. C.; Ketterson, J. B.; Wong, George K.

doi:10.1103/physrevb.48.11431

Cited by 248 publications

(170 citation statements)

References 20 publications

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“…11 Due to its unusual electronic properties ͑e.g., very long Fermi wavelength of 400 Å͒ 13 and a long l, Bi is also a unique medium for exploring quantum and ballistic transport properties. [14][15][16] For such studies as well as for capturing the large MR effect for technological purposes, Bi in thin film form is required. Unfortunately, high quality Bi thin films are notoriously difficult to produce.…”

Section: Introductionmentioning

confidence: 99%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Chien

Yang

et al. 2000

Journal of Applied Physics

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“…Similar results have been shown for bismuth nanowires and thin films with critical dimensions of the order of 20 nm and larger. However, these reported band gaps are only of the order of a few tens of meV (7,12) which is not sufficiently large with respect to the thermal energy at room temperature for use in nanoelectronics applications.…”

mentioning

confidence: 99%

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Gity¹,

Ansari²,

Lanius

et al. 2017

Applied Physics Letters

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Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.

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“…[8,9] If the thickness of bismuthene becomes thinner than the Fermi wavelength, there could be a transition from semimetal to semiconductor because of the quantum confinement effect. [10][11][12][13][14] In 1991, surface superconductivity studies of bismuth by Weitzel and Micklitz [15] provided experimental evidence of a size dependence of the superconducting transition temperature. Sunglae Cho et al observed a significant enhancement of magnetoresistance in bismuth thin films by molecular beam epitaxial [16] based on the high hole and electron motilities.…”

Section: Introductionmentioning

confidence: 99%

Few‐layer Bismuthene: Sonochemical Exfoliation, Nonlinear Optics and Applications for Ultrafast Photonics with Enhanced Stability

Liang

et al. 2017

Laser & Photonics Reviews

331

205

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As the last element in Group VA, bismuthene has garnered substantial interest for its unique electronic and mechanical properties and its enhanced stability. However, the mechanism that drives the light-bismuthene interaction remains completely unclear. Herein, a sonochemical exfoliation approach is employed to deliver a successful synthesis of few-layer bismuthene. The corresponding nonlinear optical response at the visible wavelength is investigated. The nonlinear refractive index is ß10 −6 cm 2 /W and was measured by spatial self-phase modulation. Thanks to its direct energy band-gap at 1550 nm, the saturable absorption property of bismuthene is experimentally illustrated at the telecommunication band with an optical modulation depth of ß2.03% and a saturable intensity of ß30 MW/cm 2 . The optimization of the laser parameters resulted in the generation of an ß652-femtosecond optical pulse centered at 1559.18 nm. This result indicates that the bismuthene-based saturable absorber is indeed a new and excellent material for an ultrafast saturable absorber device. Our work highlights the promise of this material in ultrafast photonics and may be considered as an important step towards bismuthene-based photonics devices (optical modulator, optical switcher, detector, etc.).

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Semimetal-to-semiconductor transition in bismuth thin films

Cited by 248 publications

References 20 publications

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Few‐layer Bismuthene: Sonochemical Exfoliation, Nonlinear Optics and Applications for Ultrafast Photonics with Enhanced Stability

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