Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures

Lansari, Y.; Ren, Jing; Sneed, B.; Bowers, Karen; Cook, J. W.; Schetzina, J. F.

doi:10.1063/1.108124

Cited by 91 publications

(20 citation statements)

References 20 publications

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“…The dashed line is the expected behavior, calculated using the method and parameters published for bulk HgSe [13]. Assuming that the band structure parameters are correct, the deviation for MBE grown HgSe can be explained by (1) postulating more than one type of charge carriers, (2) assuming a temperature dependence for the aonor concentration, or (3) supposing different scattering mechanisms which would change the carrier concentration as calculated from the experimental Hall constant. At present none of these explanations could be shown to be the correct one.…”

Section: IVmentioning

confidence: 99%

“…Until now very few publications concerning this matter have appeared in the literature [1,4]. In this article, characteristics of MBE growth of HgSe are presented and their influence on structural and electrical properties of the resulting epilayers are discussed.…”

Section: Introductionmentioning

confidence: 99%

“…Recently Lansari et al [1] produced nearly ohmic contacts to highly doped p-ZnSe by using HgSe. They observed smaller LED turn-on voltages of 2-3 V compared to that of gold as a * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

“…result of the lower valence band offset of 0.6-0.8 eV [2]. A p-type doped Hg 1 _ x Zn x Se graded layer was predicted to further improve the diode properties [1,3].…”

Section: Introductionmentioning

confidence: 99%

“…By extrapolating the linear part of the curve at high voltages to 1= 0, typical voltage offsets of 1-2 V are obtained which are consistent with the values reported in ref. [1] for this hole concentration in p-ZnSe. Annealing the samples does not result in a ohmic behavior of the contacts, as has been shown for HgTe /p-CdTe contacts [15], but increases the total resistance as illustrated in Fig.…”

mentioning

confidence: 99%

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The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

Einfeldt

Heinke

Behringer

et al. 1994

Journal of Crystal Growth

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The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.

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Section: IVmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…result of the lower valence band offset of 0.6-0.8 eV [2]. A p-type doped Hg 1 _ x Zn x Se graded layer was predicted to further improve the diode properties [1,3].…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

Einfeldt

Heinke

Behringer

et al. 1994

Journal of Crystal Growth

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Study of ZnSe‐Based Layer Structures for Blue‐Green Laser Diodes

Pessa

Rakennus

Uusimaa

et al. 1995

Physica Status Solidi (b)

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The possibilities of developing ZnSe blue-green lasers with new materials and layer structures are studied. In particular, it is considered: (i) the use of an "inverted" laser structure, n-on-p configuration, having p-type barrier reduction layers of 111-V compound semiconductors which are sandwiched between the substrate and the device and (ii) the use of ZnMnSSe as a cladding layer. Electronic band structures, current-voltage curves, and light-current curves are calculated for the lasers with inverted layer structures. Preliminary results of a study of ZnMnSSe layers grown by the molecular beam epitaxy method are also presented.

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Electrical Contacts to p‐ZnSe Based on HgSe and ZnTe

Einfeldt

Behringer

Nürnberger

et al. 1995

Physica Status Solidi (b)

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Low resistance ohmic contacts to p-ZnSe involving the use of HgSe are studied in detail. HgSe does not form an ohmic contact with p-ZnSe because of a residual valence band offset at the heterojunction of 0.5 to 0.6 eV. Annealing of HgSe/ZnSe : N does not result in an ohmic contact because a large miscibility gap in Hg,-,Zn,Se prevents a Hg-Zn interdiffusion and therefore the formation of a graded heterojunction. The molecular beam epitaxial (MBE) growth of Hg, -,Zn,Se does not circumvent this problem because these epitaxial layers suffer from a compositional phase separation due to spinodal demixing during MBE growth. A significant improvement of HgSe based contacts could be achieved by the use of ZnSe, -,Te,:N transition layers between HgSe and ZnSe : N. Either by abrupt, graded, or multilayer heterojunctions, very low contact resistivities are obtained. The growth of ZnSe, -,Te,: N layers on top of ZnSe: N is shown to reduce the carrier concentration in ZnSe : N by several orders of magnitude. A nitrogen diffusion process is believed to be responsible for this effect.

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Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures

Cited by 91 publications

References 20 publications

The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

Study of ZnSe‐Based Layer Structures for Blue‐Green Laser Diodes

Electrical Contacts to p‐ZnSe Based on HgSe and ZnTe

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