Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.
The major obstacle to the production of a blue laser is posed by difficulties with the preparation of defect-free GaN layers. A considerable amount of empirical work is presently being undertaken to achieve this goal. However, there is a lack of basic research on the reduction of residual stress and defects in these epilayers since the mechanical characteristics of GaN have not been measured yet. This is due to difficulties with experimental examination of thin films. This work addresses the mechanical properties of bulk GaN obtained by a high-pressure method. Young’s modulus (295 GPa), hardness (20 GPa), yield strength (15 GPa), and the stress–strain curve of GaN have been evaluated using nano-indentation. The cause of the sudden depth excursions during indentation of GaN epilayers has been clarified.
The N content and lattice parameter of GaNxAs1−xepilayers on GaAs (0<x<0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1−x from Vegard’s law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x⩽2.5%. The physical origin of this negative deviation is discussed.
We report a novel type of active fiber - tapered double clad fiber suitable for pumping by low brightness sources with large beam parameter product of 50/300 mm x mrad. Ytterbium double clad all-silica fiber (core/1(st) clad/2(nd) clad diameters 27/834/890 mum, NA(core)=0.11, NA(clad)=0.21), tapered down by a factor 4.8 for a length of 10.5 m was drawn from a preform fabricated by plasma chemical technologies. At a moderate Yb-ion concentration and 1:31 core/cladding ratio, the tapered double clad fiber demonstrates 0.9 dB/m pump absorption at 976 nm and excellent lasing slope efficiency. An ytterbium fiber laser with 84 W of output power and 92% slope efficiency, a 74 W superfluorescent source with 85% slope efficiency and amplifiers operating both in CW and pulsed regimes have been realized. All devices demonstrated robust single mode operation with a beam quality factor of M(2)=1.07.
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