Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy

Lansari, Y.; Cook, J. W.; Schetzina, J. F.

doi:10.1007/bf02817490

Cited by 23 publications

(6 citation statements)

References 14 publications

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“…Once the growth temperature was raised above 130°C, the growth rate dropped off dramatically. These data fit well with Lansari et al, 10 as they reported no appreciable growth of HgSe above 125°C. Note that, using analogous fluxes, the optimal HgCdTe growth temperature is 185°C, much higher than the growth temperatures achieved for HgCdSe with suitable growth rates.…”

Section: Resultssupporting

confidence: 89%

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Study of HgCdSe Material Grown by Molecular Beam Epitaxy

Brill

Chen

Wijewarnasuriya

2011

Journal of Elec Materi

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Much progress has been made in developing high-quality HgCdTe/Si for largearea focal-plane array (FPA) applications. However, even with all the material advances made to date, there is no guarantee that this technology will be mature enough to meet the stringent FPA specifications required for longwavelength infrared (LWIR) systems. With this in mind, the Army Research Laboratory (ARL) has begun investigating HgCdSe material for infrared (IR) applications. Analogous to HgCdTe, HgCdSe is a tunable semiconductor that can detect any wavelength of IR radiation through control of the alloy composition. In addition, several mature, large-area bulk III-V substrates are nearly lattice matched to HgCdSe, giving this system a possible advantage over HgCdTe, for which no scalable, bulk substrate technology exists. We have initiated a study of the growth of HgCdSe using molecular beam epitaxy (MBE). Growth temperature and material flux ratios were varied to ascertain the best growth conditions. Smooth surface morphology has been achieved using a growth temperature much lower than that used for HgCdTe. Additionally, zero void defects were nucleated at these lower temperatures. Preliminary data suggest a linear relationship between the Se/Cd flux ratio used during growth and the cutoff wavelength as measured by Fourier-transform infrared (FTIR) spectroscopy.

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Section: Resultssupporting

confidence: 89%

“…In fact, only one group has ever grown HgCdSe by MBE, and that work was done almost 20 years ago. 10 Their study used ZnTe and CdZnTe as substrates and did not address the use of III-V bulk substrates for HgCdSe growth. Another group has studied the MBE growth of HgSe on GaSb(001) substrates.…”

Section: Introductionmentioning

confidence: 99%

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

Brill

Chen

Wijewarnasuriya

2011

Journal of Elec Materi

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“…6,7 This type of contacting scheme produces deep states in the ZnTe 0.2 Se 0.8 layer which promote enhanced hole transport by means of resonant tunneling. The heterostructure was then cooled to room temperature under a Se flux to provide a Se cap layer on the surface.…”

Section: Methodsmentioning

confidence: 99%

High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates

Eason¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High-brightness blue and green light-emitting diodes ͑LEDs͒ operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy at North Carolina State University using ͑100͒ ZnSe substrates produced at Eagle-Picher Laboratory by the seeded physical vapor transport process. The blue LEDs ͑489 nm͒ produce 327 W at 10 mA drive current with an external quantum efficiency of 1.3%. In terms of photometric units, the luminous performance of the ZnCdSe blue LEDs is 1.7 lm/W at 10 mA. The brightest ZnTeSe green LEDs tested to date produce 1.3 mW at 10 mA peaked at 512 nm with an external quantum efficiency of 5.3%. The luminous performance of the green LEDs is 18 lm/W at 10 mA. Using recently-developed n-type conducting ZnSe substrates, green LEDs having external quantum efficiencies of 2.7% have also been demonstrated.

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“…The behaviour of this contact is mainly determined by the valence band offset between HgSe and ZnSe which has not yet been measured. However, it can be estimated to be 0.5 to 0.7eV from measurements of the conduction band barrier [7,81, from a comparison to other similar heterojunctions [3,91, and from a Norde evaluation of I-I/ curves of HgSe/p-ZnSe heterojunctions [lo]. Even though HgSe forms much better contacts to ZnSe : N than does Au, the valence band offset is too large for ohmic contacts as was shown by Einfeldt et al…”

Section: Contact Behaviourmentioning

confidence: 95%

Electrical Contacts to p‐ZnSe Based on HgSe and ZnTe

Einfeldt

Behringer

Nürnberger

et al. 1995

Physica Status Solidi (b)

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Low resistance ohmic contacts to p-ZnSe involving the use of HgSe are studied in detail. HgSe does not form an ohmic contact with p-ZnSe because of a residual valence band offset at the heterojunction of 0.5 to 0.6 eV. Annealing of HgSe/ZnSe : N does not result in an ohmic contact because a large miscibility gap in Hg,-,Zn,Se prevents a Hg-Zn interdiffusion and therefore the formation of a graded heterojunction. The molecular beam epitaxial (MBE) growth of Hg, -,Zn,Se does not circumvent this problem because these epitaxial layers suffer from a compositional phase separation due to spinodal demixing during MBE growth. A significant improvement of HgSe based contacts could be achieved by the use of ZnSe, -,Te,:N transition layers between HgSe and ZnSe : N. Either by abrupt, graded, or multilayer heterojunctions, very low contact resistivities are obtained. The growth of ZnSe, -,Te,: N layers on top of ZnSe: N is shown to reduce the carrier concentration in ZnSe : N by several orders of magnitude. A nitrogen diffusion process is believed to be responsible for this effect.

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Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy

Cited by 23 publications

References 14 publications

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates

Electrical Contacts to p‐ZnSe Based on HgSe and ZnTe

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