Light Emission from Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys

Yu, Zhenxin; Ren, Jing; Lansari, Y.; Sneed, B.; Bowers, Karen; Boney, C.; Eason, D. B.; Vaudo, R. P.; Gossett, K. J.; Cook, J. W.; Schetzina, J. F.

doi:10.1143/jjap.32.663

Cited by 16 publications

(6 citation statements)

References 24 publications

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“…For comparisons of the experimental XES spectra with the calculated results we consider more closely the Zn p-and d-DOS in ZnS and ZnSe compounds and in metallic Zn (see figures [3][4][5]. In ZnS the hybridization between the Zn p and d states is much weaker than it is in pure Zn and it becomes slightly weaker on going from ZnS to ZnSe.…”

Section: Discussionmentioning

confidence: 99%

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The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

Laihia

Leiro

Kokko

et al. 1996

J. Phys.: Condens. Matter

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The present work deals with the x-ray -emission bands and the electronic structures of Zn metal as well as ZnS and ZnSe compounds. The measurements of the Zn K-emission bands were made with a two-crystal x-ray spectrometer and the electronic structures were calculated by using the linear muffin-tin orbital (LMTO) method. The above-mentioned compounds were chosen as the subject of the investigation because they are ideal materials for studying the 3d - 4p hybridization since the Zn d band is about 10 eV below the Fermi level and therefore and are quite well separated from each other. We also suggest that the peak which is less than 9 eV below the same level in the experimental spectrum of the ZnS (ZnSe) compound is largely caused by the quadrupole radiation.

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Section: Discussionmentioning

confidence: 99%

“…ZnSe turns out to be a useful compound in semiconductor technology. Due to its wide band gap it is a promising material for the development of blue-light lasers [1][2][3]. X-ray emission spectra (XES) offer an ideal tool for the investigation of semiconductors and insulators because of the absence of charging effects.…”

Section: Introductionmentioning

confidence: 99%

The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

Laihia

Leiro

Kokko

et al. 1996

J. Phys.: Condens. Matter

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“…Experimental and theoretically calculated energies of the exciton transition (meV) (heavy-and light-hole). The experimental values were measured using photoluminescence at 4.2 K [2].…”

Section: B Exciton Transition Energies For Zns1−xsex/zns Sqwsmentioning

confidence: 99%

“…ZnS 1−x Se x /ZnS quantum wells (QWs) have been experimentally studied from the viewpoint of their applications to the fabrication of UV optoelectronic devices [1,2]. The bulk exciton binding energy of ZnS (36 meV) is greater than the room-temperature (RT) thermal energy (approximately 25 meV) [3].…”

Section: Introductionmentioning

confidence: 99%

Effects of exciton–longitudinal optical phonon interaction and quantum confinement on exiton binding energies in ZnS_1-xSe_x/ZnS single quantum wells

Onodera¹

2011

J. Phys. Stud.

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We study the effects of the exciton-longitudinal optical (LO) phonon interaction and quantum confinement on the exciton binding energies in ZnS1−xSex/ZnS single quantum wells (SQWs) for an Se alloy content (x) range of 0.1-0.3. In narrow ZnS1−xSex/ZnS SQWs, the heavy-hole (lighthole) exciton binding energy calculated by taking into account the exciton-LO phonon interaction for values of x in the range of 0.2-0.3 (0.3) exceeds the LO phonon energy of ZnS1−xSex. The difference between the maximum heavy-hole (light-hole) exciton binding energy for x = 0.3 and the LO phonon energy is less than 1.5 meV (1.0 meV). This SQW shows a weak quantum confinement due to a small conduction-band offset.

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“…The p-and n-doping levels were around 101 8cm3 For higher current density, the curve was determined under pulsed current injection, with a duty cycle of 1%. 5 when a CdZnSe QW in ZnSe was replaced by a ZnSSeTe QW, and was attributed to the fact that Te forms a deep center in ZnSe25. This value is comparable to the best ZnSe based diodes, although we use a simple gold pcontact, and no special care has been taken to optimize this contact.…”

Section: Diodesmentioning

confidence: 99%

<title>Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes</title>

Faschinger¹,

Ferreira²,

Krump³

et al. 1994

SPIE Proceedings

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One of the main problems for the fabrication of optoelectronic devices in the blue spectral range is the limited pdopability and the resulting high contact resistivity of p-ZnSe. We show that the admixture of even small Te fractions to ZnSe has a strong beneficial effect on doping levels and contacts of MBE grown material doped with DC nitrogen plasma. Since the energy gap decreases through the admixture of Te, we additionally introduced Mg in order to remain in the blue range of the spectrum. Pdoping levels abovelO18cm3 and Ohmic contacts to ZnMgSeTe could be obtained for Te contents of more than 20%, the highest levels being iO°cnr3 for Zn(1x)MgxSe(1y)Tey with xO.4.On the other hand, the admixture of Te to ZnSe strongly reduced the obtained n-doping levels. As a viable alternative we used n4ype layers of Chlorine doped ZnMgSe.This allowed the growth of pn-junctions of n-ZnMgSe and pZnMgSeTe. The Mg content in the n and p-layer was adjusted in a way that both layers had the same lattice constant and the same doping level of 1O18cm3. The diodes emit light in the blue.green spectral range at 77K. Although the optical properties have to be improved for device applications, ZnMgSeTe could be an interesting alternative for blue light emitters since high doping levels, ohmic pcontacts and low operation voltages are obtainable in a relatively easy way.V. which was attributed to the large Schottky barrier between metals and p-ZnSe. 50/ SPIE Vol. 2346 lI.V! Blue/Green Laser Diodes (1994) 0-81 94-1679-7/94/$6.O0 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Light Emission from Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys

Cited by 16 publications

References 24 publications

The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

Effects of exciton–longitudinal optical phonon interaction and quantum confinement on exiton binding energies in ZnS_1-xSe_x/ZnS single quantum wells

<title>Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes</title>

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Light Emission from Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys

Cited by 16 publications

References 24 publications

The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

The x-ray -emission band and the electronic structure of Zn, ZnS and ZnSe crystals

Effects of exciton–longitudinal optical phonon interaction and quantum confinement on exiton binding energies in ZnS1-xSex/ZnS single quantum wells

<title>Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes</title>

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Effects of exciton–longitudinal optical phonon interaction and quantum confinement on exiton binding energies in ZnS_1-xSe_x/ZnS single quantum wells