The concept of an electrically doped dynamically configurable fieldeffect transistor (FET) is presented, which provides freedom to dynamically switch between a high-performance MOSFET and a low-power tunnel FET that can be ideal for complementary circuit implementation. The charge carrier concentration, polarity and conduction mechanism of the device are precisely controlled by the appropriate application of an external polarity control signal, instead of the conventional ion-implantation process. Two-dimensional TCAD simulation results confirm the dynamic configuration of the proposed device and good functionality agreement with existing devices as well as it having the requisite qualities for low-power and high-performance applications.Introduction: Tunnel field-effect transistors (TFETs) have major performance advantages over conventional MOSFETs due to the steepness of the transition slope from the off to the on state and very low off-state current. For moderate performance requirements, TFETs not only offer a better I on /I off ratio, but also power savings and superior performance for the same voltage over MOSFETs [1]. However, for higher performance requirements, MOSFETs are attractive options [2,3]. To achieve computationally efficient (simultaneous improvement in performance and power savings) FETs, both (TFETs and MOSFETs) transistors need to be integrated into circuits that can extend the Boolean functionality of the complementary metal-oxide-semiconductor (CMOS) technology. Further, lightly doped TFETs and MOSFETs offer less susceptibility to random variability in device performance due to reduced random dopant fluctuations (RDFs) and an absence of an abrupt doping profile at the S/D junctions; as a result, the proposed device may have significantly less sensitivity to process parameter variations, reduced fabrication complexity, the thermal budget and leakage current [4].In this Letter, we propose an electrically doped dynamically configurable double-gate FET that can be configured dynamically by applying an appropriate polarity bias. In other words, the same device can be operated either as a TFET or MOSFET, hence yielding the benefits of both devices and the freedom to dynamically switch between high-performance and low-power (power saving) applications. Apart from dynamically switching between the TFET and the MOSFET, the polarity (n-and p-type) of the proposed device can also be controlled dynamically. The concept of dynamic configurability is based on the electrically doped source and drain regions, instead of relying on the abrupt doping profile at the junctions. The proposed device employs the same concept for realisation of dynamically configurable TFETs and MOSFETs, and they can be programmed dynamically to an n-TFET (or MOSFET) or p-TFET (or MOSFET). Recently, configurable logic gates using polarity-controlled silicon nanowire (SiNW) FETs have been demonstrated with configurable n-and p-MOSFETs using extra polarity gates (PGs) and they have shown good potential for higher packaging density ...
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