Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits

Kamal, Neha; Lahgere, Avinash; Singh, Jawar

doi:10.1109/tdmr.2019.2949064

Cited by 12 publications

(6 citation statements)

References 16 publications

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“…The first step in the simulation procedure is to perform a transient simulation in order to determine the generation rate of electron–hole (EHP) pairs. Based on the total number of additional electrons/holes generated, the carrier continuity and Poisson equations are solved, and transient current and collected charge are ultimately determined 51 . In order to account for the photonic emission, the effect of photons can be modelled using stimulated recombination rate using the Eq.…”

Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

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Section: Device Description and Simulation Methodologymentioning

confidence: 99%

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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“…It can quickly excite the piezoelectric wafer [25]. The square wave pulse has good properties in terms of [26]. The duty cycle of the square wave pulse is 0.25%.…”

Section: Experimental Environment and Testingmentioning

confidence: 99%

Defect Recognition in Concrete Ultrasonic Detection Based on Wavelet Packet Transform and Stochastic Configuration Networks

Zhao

Zheng

et al. 2021

IEEE Access

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“…The square wave pulse is generated by using the drive circuit to drive the MOS transistor on and off. Compared with the sharp pulse, the rise and fall times of the square pulse are shorter, the resolution of the amplitude is higher, and the stability of the output waveform is better [ 27 , 28 ]. The output power of the full-bridge circuit composed of MOS transistors is twice as large as that of the half-bridge circuit [ 29 ], which is more suitable for high-power applications.…”

Section: Description Of the Ultrasonic Detection Systemmentioning

confidence: 99%

Design and Performance Analysis of an Ultrasonic System for Health Monitoring of Concrete Structure

Zhao

Zheng

et al. 2021

Sensors

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The development and research of an ultrasonic-based concrete structural health monitoring system encounters a variety of problems, such as demands of decreasing complexity, high accuracy, and extendable system output. Aiming at these requirements, a low-cost extendable system based on FPGA with adjustable system output has been designed, and the performance has been evaluated by different assessment parameters set in this paper. Besides the description of the designed system and the experiments in air medium, the residual similarity and Pearson correlation coefficients of experimental and theoretical data have been used to evaluate the submodules’ output. The output performance of the overall system is evaluated by the Pearson correlation coefficient, root-mean-square error (RMSE), and magnitude-squared coherence with 40 experimental data. The maximum, median, minimum, and mean values in three-parameter datasets are analyzed for discussing the working condition of the system. The experimental results show that the system works stably and reliably with tunable frequency and amplitude output.

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Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits

Cited by 12 publications

References 16 publications

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Defect Recognition in Concrete Ultrasonic Detection Based on Wavelet Packet Transform and Stochastic Configuration Networks

Design and Performance Analysis of an Ultrasonic System for Health Monitoring of Concrete Structure

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