Ultrathin (8–23 Å) silicon oxynitrides have been studied in the temperature range of 560–1000 °C in 4 Torr of NO using a sequential growth and analysis approach. X-ray photoelectron spectroscopy indicates that with increasing growth temperature and time, a bonding structure with predominantly Si–O rather than Si–N formation is favored. Simultaneously, the average volume fraction of N (N/N+O) in the dielectric decreases, as a consequence of which the N1s binding energy increases by 0.2–0.8 eV from its initial value of 397.8 eV at a thickness of 8 Å. A correlation of the electrical characteristics of NO grown oxynitrides with nitrogen content and location has been made. A film growth mechanism that takes into account the removal of previously incorporated N by NO is also proposed.
Tantalum oxide films were deposited on Si substrates by chemical vapor deposition using the precursor Ta[N(CH3)2]5, and an oxidizing agent—O2, H2O, or NO. Temperatures ranged between 400 and 500 °C and total pressures between 10−3 and 9 Torr. NO did not lead to satisfactory film growth rates. Insignificant (<1 at. %) N and up to a few percent C are incorporated when O2 is the oxidant and the total pressure is in the Torr regime. In the milliTorr regime, the Ta2O5 films, grown using either O2 or H2O, contain readily detectable amounts of C and N. For the films grown with O2 in the Torr regime, leakage currents were significantly lowered when the flow rate of O2 increased from 100 to 900 sccm.
In this paper, the fabrication and material innovation involved in the first and only entirely inkjet-printed polysilicon thin film transistors (TFTs) are described. To form TFT layers, five inkjet printing inks were developed with the goal of fabricating TFTs by using purely additive processing without vacuum deposition or conventional lithography. A silicon ink was developed to form both the channels and polysilicon gates, and boron and phosphorus dopant inks were developed for N+ and P+ doping. In addition, a silver nanoparticle (NP) ink was developed to form interconnect traces, and a palladium chloride ink was formulated to create palladium silicide for the ohmic contacts between the source and the drain. The first N-type metal-oxide-semiconductor (MOS) polysilicon TFT was fabricated with a top-gate self-alignment scheme. This exhibited a mobility of approximately 80 cm2 V s−1. Next, P-type MOS transistors as well as complementary MOS devices were also successfully fabricated.
The nitridation of clean Si(100)-2×1 with NO2 has been studied using Auger electron spectroscopy (AES). In this letter we demonstrate that the interaction of Si(100) with NO2 leads to the efficient incorporation of nitrogen (N) and oxygen (O) in single crystal Si as opposed to the case of N2O on Si(100). A comparative study of the incorporation efficiency of N and O by the reaction of NO2 and N2O with Si(100) over a wide temperature range has been performed. It is observed that only a few Langmuirs (L) of NO2 is required to saturate the Si surface while reaction with N2O is not as favorable. At temperatures ranging from room temperature to 1000 °C, varying proportions of N and O are incorporated into the Si by NO2. Repeated dosing and annealing cycles indicate that continued incorporation of N and O is possible even through a nitrogen-rich Si layer.
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