Abstract:The nitridation of clean Si(100)-2×1 with NO2 has been studied using Auger electron spectroscopy (AES). In this letter we demonstrate that the interaction of Si(100) with NO2 leads to the efficient incorporation of nitrogen (N) and oxygen (O) in single crystal Si as opposed to the case of N2O on Si(100). A comparative study of the incorporation efficiency of N and O by the reaction of NO2 and N2O with Si(100) over a wide temperature range has been performed. It is observed that only a few Langmuirs (L) of NO2 … Show more
“…Some workers detect significant amounts of N 2 O as a dissociation product. 41 Many reports show that NO must adsorb dissociatively at room temperature, 38,[45][46][47] but some observe only molecular species as the adsorbate. 48,49 The slope of this Stern-Volmer plot is 730 Torr -1 .…”
Section: Resultsmentioning
confidence: 99%
“…Some workers detect significant amounts of N 2 O as a dissociation product ,− but some observe only molecular species as the adsorbate. , Although there is agreement that dangling bonds are involved in adsorption, some researchers have found that the dangling bonds are capped by both N and O atoms, , while others find dangling bonds exclusively occupied by O. , …”
The visible photoluminescence of porous Si is quenched by nitric oxide and nitrogen dioxide to detection limits of 1.4 × 10(-)(3) and 5.3 × 10(-)(5) Torr, respectively (corresponding to 2 ppm and 70 ppb). At analyte partial pressures in the low milliTorr range, the photoluminescence quenching is partially reversible; recovery from nitrogen oxide exposure occurs on a time scale of minutes. For both NO and NO(2), the reversible photoluminescence quenching response fits a Stern-Volmer kinetic model. At higher partial pressures, quenching deviates from Stern-Volmer kinetics and some permanent loss of photoluminescence intensity occurs due to oxidation of the porous Si surface. Photoluminescence from porous Si is not quenched by nitrous oxide or carbon dioxide and only slightly quenched by carbon monoxide and oxygen.
“…Some workers detect significant amounts of N 2 O as a dissociation product. 41 Many reports show that NO must adsorb dissociatively at room temperature, 38,[45][46][47] but some observe only molecular species as the adsorbate. 48,49 The slope of this Stern-Volmer plot is 730 Torr -1 .…”
Section: Resultsmentioning
confidence: 99%
“…Some workers detect significant amounts of N 2 O as a dissociation product ,− but some observe only molecular species as the adsorbate. , Although there is agreement that dangling bonds are involved in adsorption, some researchers have found that the dangling bonds are capped by both N and O atoms, , while others find dangling bonds exclusively occupied by O. , …”
The visible photoluminescence of porous Si is quenched by nitric oxide and nitrogen dioxide to detection limits of 1.4 × 10(-)(3) and 5.3 × 10(-)(5) Torr, respectively (corresponding to 2 ppm and 70 ppb). At analyte partial pressures in the low milliTorr range, the photoluminescence quenching is partially reversible; recovery from nitrogen oxide exposure occurs on a time scale of minutes. For both NO and NO(2), the reversible photoluminescence quenching response fits a Stern-Volmer kinetic model. At higher partial pressures, quenching deviates from Stern-Volmer kinetics and some permanent loss of photoluminescence intensity occurs due to oxidation of the porous Si surface. Photoluminescence from porous Si is not quenched by nitrous oxide or carbon dioxide and only slightly quenched by carbon monoxide and oxygen.
“…NO 2 is very corrosive compared to N 2 O, and by suitable choice of operating conditions, it might be possible to increase the atomic N concentration by delivering this molecule containing a very active nitrogen atom. Recently, an ultrahigh vacuum surface chemistry study showed that the nitridation of clean Si(100)-2×1 with NO 2 leads to the efficient incorporation of nitrogen (N) and oxygen (O) compared to N 2 O . While comparison with N 2 O at this ultrahigh vacuum dosing level does not connect directly to conditions of atmospheric oxidation and nitridation, the inference is clear.…”
Section: 2 Oxynitride Film Growthmentioning
confidence: 99%
“… 7 Summary of (a) N/Si for clean Si surface exposed to 10, 100, and 300 langmuir of NO 2 , (b) N/O for clean Si surface exposed to 500 langmuir of NO 2 , and (c) O/Si for clean Si surface exposed to 10, 100, and 300 langmuir of NO 2 at varying substrate temperatures. From ref .…”
Section: 2 Oxynitride Film Growthmentioning
confidence: 99%
“…Recently, an ultrahigh vacuum surface chemistry study showed that the nitridation of clean Si(100)-2×1 with NO 2 leads to the efficient incorporation of nitrogen (N) and oxygen (O) compared to N 2 O. 134 While comparison with N 2 O at this ultrahigh vacuum dosing level does not connect directly to conditions of atmospheric oxidation and nitridation, the inference is clear.…”
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