Chemical vapor deposition of ultrathin Ta2O5 films using Ta[N(CH3)2]5

Abstract

Tantalum oxide films were deposited on Si substrates by chemical vapor deposition using the precursor Ta[N(CH3)2]5, and an oxidizing agent—O2, H2O, or NO. Temperatures ranged between 400 and 500 °C and total pressures between 10−3 and 9 Torr. NO did not lead to satisfactory film growth rates. Insignificant (<1 at. %) N and up to a few percent C are incorporated when O2 is the oxidant and the total pressure is in the Torr regime. In the milliTorr regime, the Ta2O5 films, grown using either O2 or H2O, contain readily detectable amounts of C and N. For the films grown with O2 in the Torr regime, leakage currents were significantly lowered when the flow rate of O2 increased from 100 to 900 sccm.

Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors

“…This value is comparable to that of CVD Ta 2 O 5 using the same precursor and oxygen, which was grown at a much higher temperature, 450°C. 28 In a previous report, a lower leakage current density was reported for ALD Ta 2 O 5 from PDMAT and water ͑1 A/cm for 10-100 nm thick films͒, but direct comparison with our result is difficult since the exact thickness and annealing conditions were not described. 15 The leakage current density of our PE-ALD Ta 2 O 5 is ϳ8 ϫ 10 −7 A/cm 2 , which is about two orders of magnitude lower than that of thermal ALD.…”

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

“…1 Tantalum oxide has been extensively studied by many techniques: radio-frequency ͑rf͒ or reactive sputtering, 2-5 chemical vapor deposition ͑CVD͒, [6][7][8] and anodization of thin Ta films. 9,10 Different deposition methods can affect the structural and electrical properties of the Ta 2 O 5 films.…”

Study of Thermal Stability of Cvd Ta205/Si Interface

“…Experiments were carried out in a bench scale CVD reaction chamber (base pressureIx 10-8 torr) connected by a gate valve and sample transfer mechanism to an UHV XPS chamber (base pressure -8x10-10 torr) [9]. Prior to insertion in the film growth chamber, n-type Si(100) substrates were cleaned and handled as detailed in our previous work [9].…”

“…Prior to insertion in the film growth chamber, n-type Si(100) substrates were cleaned and handled as detailed in our previous work [9]. Ta205 films were deposited by Ta(N(CH3)2)5 + 02 using N2 as the carrier gas.…”