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The large physical size of capacitors and/or excessive values of associated lead inductance are two major limitations in the development of novel packaging modules, with high packaging density, high performance and reliability along with low system cost. Embedded capacitor technology in thin film form offers a promising solution to these limitations. A design space with capacitance density and breakdown voltage as performance properties, with material dielectric constant and film thickness as parameters has been explored, focusing on tantalum pentoxide (Ta 2 O 5 ) as the dielectric material. An inherent tradeoff is established between breakdown voltage and capacitance density for thin film capacitors. The validity of the proposed design space is illustrated with thin films of Ta 2 O 5 , showing deviation from the "best can achieve" breakdown voltage for films thinner than 0.4 m and films thicker than 1 m.Index Terms-Breakdown field, capacitance density, design space, embedded capacitors, tantalum pentoxide, thin films.

Buried interfaces of thin Al/Ta2O5 and Ta2O5/Al films were studied using the x-ray photoelectron spectroscopy technique. The peak decomposition technique was employed to identify the composition and chemical states at the interface region. It was observed that there is an “intermixing layer” at the Al/Ta2O5 interface, where Ta2O5 has been reduced to lower binding energy states due to the reaction of Al with Ta2O5 during deposition. On the other hand, the Ta2O5/Al interface is relatively stable, consisting of Ta2O5 and Al2O3 interfacial layers. Based on a uniform multilayer structure model, the thickness of the interfacial layers was estimated by using the relative photoelectron intensities.

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Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering J.