Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from positive to negative values resulted in reduced p-type doping by NO2, which decreased below detection limit at −45 V. A reverse trend was observed for NH3, where its n-type doping increased with more negative gate voltage, becoming undetectable at 5 V. Our results indicate that adsorption induced molecular doping of graphene could not be detected when the Fermi level coincides with the adsorption induced defect states, which yields NO2 acceptor energy level of ∼320 meV below the Dirac point.

The narrow genetic base of tomato poses serious challenges in breeding. Hence, with the advent of clustered regularly interspaced short palindromic repeat (CRISPR)-associated protein9 (CRISPR/Cas9) genome editing, fast and efficient breeding has become possible in tomato breeding. Many traits have been edited and functionally characterized using CRISPR/Cas9 in tomato such as plant architecture and flower characters (e.g. leaf, stem, flower, male sterility, fruit, parthenocarpy), fruit ripening, quality and nutrition (e.g., lycopene, carotenoid, GABA, TSS, anthocyanin, shelf-life), disease resistance (e.g. TYLCV, powdery mildew, late blight), abiotic stress tolerance (e.g. heat, drought, salinity), C-N metabolism, and herbicide resistance. CRISPR/Cas9 has been proven in introgression of de novo domestication of elite traits from wild relatives to the cultivated tomato and vice versa. Innovations in CRISPR/Cas allow the use of online tools for single guide RNA design and multiplexing, cloning (e.g. Golden Gate cloning, GoldenBraid, and BioBrick technology), robust CRISPR/Cas constructs, efficient transformation protocols such as Agrobacterium, and DNA-free protoplast method for Cas9-gRNAs ribonucleoproteins (RNPs) complex, Cas9 variants like PAM-free Cas12a, and Cas9-NG/XNG-Cas9, homologous recombination (HR)-based gene knock-in (HKI) by geminivirus replicon, and base/prime editing (Target-AID technology). This mini-review highlights the current research advances in CRISPR/Cas for fast and efficient breeding of tomato.

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The tuning of charge carrier of graphene is a potential step for the realization of multifunctional use in current electronic/optoelectronic devices.

Graphene has been widely investigated and applied in almost all areas of science and technology. Modulation of graphene properties is needed for its potential utilization in various applications. Chemical doping is one of the most attractive and efficient strategies to alter graphene properties. To date, substantial progress in this area has been reported, which needs to be thoroughly reviewed for its effective implementation in the development of commercial products in the days to come. This article presents a systematic, critical, and more informative review of the recent advancement in the chemical doping of graphene and its applications. Starting with a brief history along with the properties and synthesis of graphene, different experimental approaches to chemical doping and their outcomes reported so far are systematically documented. Further, extensive studies based on potential applications of doped graphene in various fields including light‐emitting diodes, photodetectors, solar cells, energy storage devices, sensors, and medical diagnoses are discussed and presented. Finally, the study is concluded with discussions on future prospective research work in this area.

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It is critical to modulate the Fermi level of graphene for the development of high-performance electronic and optoelectronic devices. Here, we have demonstrated the modulation of the Fermi level of chemical vapor deposition (CVD)-grown monolayer graphene (MLG) via doping with nanoparticles to macromolecules such as titanium dioxide nanoparticles (TiO 2 NPs), nitric acid (HNO 3 ), octadecyltrimethoxysilane (OTS) self-assembled monolayer (SAM), and poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS). The electronic properties of pristine and doped graphene samples were investigated by Raman spectroscopy and electrical transport measurements. The right shifting of G and 2D peaks and reduction in 2D to G peak intensity ratio ( I 2D / I G ) assured that the dopants induced a p-type doping effect. Upon doping, the shifting of the Dirac point towards positive voltage validates the increment of the hole concentration in graphene and thus downward shift of the Fermi level. More importantly, the combination of HNO 3 /TiO 2 NP doping on graphene yields a substantially larger change in the Fermi level of MLG. Our study may be useful for the development of graphene-based high-performance flexible electronic devices.

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