Tailoring of electrical properties of TiO2 decorated CVD grown single-layer graphene by HNO3 molecular doping

Singh, Anand Kumar; Chaudhary, Vidhi; Singh, Arun Kumar; Sinha, S. R. P.

doi:10.1016/j.synthmet.2020.116389

Cited by 10 publications

(3 citation statements)

References 45 publications

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“…Details about the growth of the MLG film and its transfer process have been discussed in our previous paper. 29 In order to fabricate the graphene field effect transistors, the source and drain electrodes of the Au film (30 nm thick) were thermally evaporated onto the graphene using the shadow mask method.…”

Section: Methodsmentioning

confidence: 99%

Fermi-Level Modulation of Chemical Vapor Deposition-Grown Monolayer Graphene via Nanoparticles to Macromolecular Dopants

Singh

Sinha

2021

ACS Omega

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It is critical to modulate the Fermi level of graphene for the development of high-performance electronic and optoelectronic devices. Here, we have demonstrated the modulation of the Fermi level of chemical vapor deposition (CVD)-grown monolayer graphene (MLG) via doping with nanoparticles to macromolecules such as titanium dioxide nanoparticles (TiO 2 NPs), nitric acid (HNO 3 ), octadecyltrimethoxysilane (OTS) self-assembled monolayer (SAM), and poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS). The electronic properties of pristine and doped graphene samples were investigated by Raman spectroscopy and electrical transport measurements. The right shifting of G and 2D peaks and reduction in 2D to G peak intensity ratio ( I 2D / I G ) assured that the dopants induced a p-type doping effect. Upon doping, the shifting of the Dirac point towards positive voltage validates the increment of the hole concentration in graphene and thus downward shift of the Fermi level. More importantly, the combination of HNO 3 /TiO 2 NP doping on graphene yields a substantially larger change in the Fermi level of MLG. Our study may be useful for the development of graphene-based high-performance flexible electronic devices.

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Section: Methodsmentioning

confidence: 99%

Fermi-Level Modulation of Chemical Vapor Deposition-Grown Monolayer Graphene via Nanoparticles to Macromolecular Dopants

Singh

Sinha

2021

ACS Omega

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“…82 In 2021, Fidan et al studied the dependency of junction area on the performance of G/Si based PD, where junction area is defined as that area of silicon substrate which is in direct contact of graphene. 95,96 They reported that the photoresponsivity Challenges faced by graphene/silicon based devices.-The appearance of G/Si heterojunction is highly promising for large scale integration of photovoltaic devices due to the formation of surface junction as well as distinctive properties of graphene. But still G/Si based PDs suffers from low value of responsivity and high dark current to light current ratio and various reasons are associated with it.…”

Section: Graphene/silicon Based Photodetectormentioning

confidence: 99%

Review—Photodetection Properties of Graphene/Silicon van der Waals Heterojunction

Kumar¹,

Gupta²

2022

ECS J. Solid State Sci. Technol.

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Integration of graphene with the bulk semiconductor leads to the formation of van der Waals heterojunction exhibiting distinctive electrical and optical properties which can overcome the intrinsic limitations of isolated two-dimensional and three-dimensional material based devices. This architecture results in the formation of a surface junction; that is the depletion region is just below the one atomic layer and therefore highly accessible photosensitive area. Graphene/Semiconductor junction based optoelectronic devices perform remarkably in the application areas of photodetection, chemical and biological sensing, optical communication and environmental monitoring etc. In particular, Graphene/Silicon van der Waals heterojunction based devices have achieved high photoresponsivity of 5.5 A/W with very high specific detectivity of 5.71 × 1013 jones which is a great milestone in photodetection industry. Therefore, a thorough study of the physics behind the junction and potentiality of the performance of Graphene/Silicon junction based devices will be essential to serve as a basis for the study of more complex nanophotonic devices. Here, we review the state-of-the-art of the research work on the photodetectors based on Graphene/Silicon heterojunction through various modifications, such as introduction of native oxide layer or TiO2, Al2O3 layer and with the integration of different types of nanostructures etc.

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“…Choucair et al [30] have shown a method to prepare graphene based on hydrothermal synthesis and sonication. The recent advances in the largescale synthesis of graphene by CVD on TiO 2 [31] and Cu [32] films open up various macroscopic applications of graphene. In addition, graphene have been led to investigate the design and the development low-cost and high yield preparation protocols for chemically-derived graphene (graphene oxide).…”

Section: Introductionmentioning

confidence: 99%

Enhancement of photocatalytic by Mn3O4 spinel ferrite decorated graphene oxide nanocomposites

et al. 2021

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The hydrothermal process was used to prepare Mn3O4/x%GO nanocomposites (NC’s) having different ratios of the Mn3O4 nanoparticles (NP’s) on the surface of graphene oxide (GO) sheet. SEM image showed that the Mn3O4 NP’s were distributed over the surface of GO sheet. HRTEM images exhibited the lattice fringe arising from the (101) plane of the Mn3O4 NP’s having the interplanar d-spacing of 0.49 nm decorating on the surface of GO. The electronic absorption spectra of Mn3O4/x%GO NC’s also show broad bands from 250 to 550 nm. These bands arise from the d–d crystal field transitions of the tetrahedral Mn3+ species and indicate a distortion in the crystal structure. Photo-catalytic activity of spinel ferrite Mn3O4 NP’s by themselves was low but photo-catalytic activity is enhanced when the NP’s are decorating the GO sheet. Moreover, the Mn3O4/10%GO NC’s showed the best photo-catalytic activity. This result comes from the formation of Mn–O–C bond that confirm by FT-IR. This bond would facilitate the transfer of the photoelectrons from the surfaces of the NP’s to the GO sheets. PL emission which is in the violet–red luminescent region shows the creation of defects in the fabricated Mn3O4 NP’s nanostructures. These defects create the defect states to which electrons in the VB can be excited to when the CB. The best degradation efficiency was achieved by the Mn3O4 NP’s when they were used to decorate the GO sheets in the Mn3O4/10%GO NC’s solution. Highlights Lattice fringe of Mn3O4 with an interplanar d-spacing of 0.49 nm for (101) plane. Photocatalytic activity of spinel ferrite Mn3O4 nanoparticles by itself is low. Number of photoelectrons created depends on number of Mn3O4 on a given area of GO The bonding of the Mn3O4 to the GO sheet would be though a Mn–O–C junction. The degradation processes were accelerated by Mn3O4/10%GO nanocomposites Graphic abstract

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Tailoring of electrical properties of TiO2 decorated CVD grown single-layer graphene by HNO3 molecular doping

Cited by 10 publications

References 45 publications

Fermi-Level Modulation of Chemical Vapor Deposition-Grown Monolayer Graphene via Nanoparticles to Macromolecular Dopants

Fermi-Level Modulation of Chemical Vapor Deposition-Grown Monolayer Graphene via Nanoparticles to Macromolecular Dopants

Review—Photodetection Properties of Graphene/Silicon van der Waals Heterojunction

Enhancement of photocatalytic by Mn3O4 spinel ferrite decorated graphene oxide nanocomposites

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