Investigation of electronic properties of chemical vapor deposition grown single layer graphene via doping of thin transparent conductive films

Abstract

The tuning of charge carrier of graphene is a potential step for the realization of multifunctional use in current electronic/optoelectronic devices.

Fermi-Level Modulation of Chemical Vapor Deposition-Grown Monolayer Graphene via Nanoparticles to Macromolecular Dopants

“…As illustrated in Figure 5 c, the hole and electron mobilities of CVD-grown MLG are reduced after doping with HNO 3 , TiO 2 NPs, HNO 3 /TiO 2 , PEDOT:PSS, and OTS SAM molecules. 15 , 24 Upon doping, reduction in the carrier mobility of MLG could be attributed to the creation of charge impurity scattering centers, as well the short-range disorder in the graphene lattice. It is clearly observed that the HNO 3 /TiO 2 -doped MLG device shows a minimum hole mobility, likely due to the high scattering effect.…”

“…Therefore, identifying a suitable method to control the charge carrier concentration and thus Fermi level of graphene is an important step. In this context, researchers have adopted various doping strategies, including adsorption of gas molecules, ultraviolet irradiation, chemical doping, and electrostatic-field doping, for the tuning of charge carrier density in graphene. − However, thermal and ultraviolet irradiation doping techniques induced defects in the lattice of graphene and thus deformed its electronic structure, resulting in significant reduction in graphene conductivity. On the other hand, electric-field doping requires a high voltage for a long time to bring about a substantial change in the electronic properties of graphene.…”

Functionalized and Platinum-Decorated Multi-Layer Oxidized Graphene as a Proton, and Electron Conducting Separator in Solid Acid Fuel Cells

“…This could be changed by introducing a graphene separator between the CDP and platinum layers. Graphene attracted considerable interest because of its unique electrical, thermal, and me-chanical properties [66][67][68][69][70][71][72][73][74]. These properties are affected by the graphene layers number, whereas the conductivity decreases with the increase in the graphene thickness [75][76][77][78][79][80][81][82][83][84].…”

Remarkable Noise Reduction in High-Stability Self-Powered Doped Graphene/Si-Quantum Dot Broadband Photodetectors by Using Graphene Quantum Dots as an Interlayer

“…Photodetectors (PDs) are extensively employed as crucial components in a variety of fields such as information technology, telecommunication, internet of things, scanning, medical diagnosis/treatments, and military sensing. − Large conductivity and good transparency of the electrodes for a PD are essential for its high performance especially in the visible light region. Among the multiple electrodes, graphene (GR) transparent conductive electrodes (TCEs) have already been employed in the area of optical detecting due to their excellent electrical/optical properties. , The fabrication of Schottky-junction PDs by a simple method of transferring GR to most-popular Si semiconductors is well known, − thereby showing better functionalities compared to their metal electrode-based counterparts. Nevertheless, the photoresponse is limited in its further enhancement owing to the large leakage current caused by relatively high-density defect states at the GR/Si interface .…”

“…Among the multiple electrodes, graphene (GR) transparent conductive electrodes (TCEs) have already been employed in the area of optical detecting due to their excellent electrical/optical properties. 6,7 The fabrication of Schottkyjunction PDs by a simple method of transferring GR to mostpopular Si semiconductors is well known, 8−15 thereby showing better functionalities compared to their metal electrode-based counterparts. Nevertheless, the photoresponse is limited in its further enhancement owing to the large leakage current caused by relatively high-density defect states at the GR/Si interface.…”