2021
DOI: 10.1016/j.matpr.2020.11.352
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Tuning of electronic properties of chemical vapor deposition grown graphene via self-assembled monolayer doping

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Cited by 5 publications
(6 citation statements)
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“…[ 42,43 ] To do so, various doping techniques have been demonstrated by substitution of atoms, [ 44 ] absorption of molecules, [ 45 ] deposition of self‐assembled monolayers. [ 46,47 ] covalent functionalization, [ 48 ] and metal nanoparticles (NPs). [ 49 ] The doping impurities with electron‐withdrawing or electron‐donating properties lead to an increase of hole or electron concentrations in graphene, resulting in change of Fermi‐level position of graphene from Dirac point K ( Figure a–c).…”
Section: Chemical Doping Of Graphenementioning
confidence: 99%
“…[ 42,43 ] To do so, various doping techniques have been demonstrated by substitution of atoms, [ 44 ] absorption of molecules, [ 45 ] deposition of self‐assembled monolayers. [ 46,47 ] covalent functionalization, [ 48 ] and metal nanoparticles (NPs). [ 49 ] The doping impurities with electron‐withdrawing or electron‐donating properties lead to an increase of hole or electron concentrations in graphene, resulting in change of Fermi‐level position of graphene from Dirac point K ( Figure a–c).…”
Section: Chemical Doping Of Graphenementioning
confidence: 99%
“…In oxide semiconductors, the hydroxyl group acting as a trap on the surface of the semiconductor layer decreases through reaction with the head group of the SAM, thereby eliminating the trapping sites and increasing the number of carriers in the channel, thereby improving the device performance [78]. On the other hand, in TMDs, the characteristics of the TMD-based transistor are modulated due to the effect of the tail group of the SAM facing the semiconductor layer, and the dipole of the tail group applies an electric field to the channel [71]. Finally, we dealt with the use of SAMs as a linker in biosensors.…”
Section: Discussionmentioning
confidence: 99%
“…However, the conventional doping techniques (i.e., ion implantation) used in silicon-based fabrications degrade and damage these semiconductors; thus, there is a need for the development of alternative methods to control the electrical properties of the semiconductors. To meet these demands, unusual SAM-based doping techniques have been attempted [71][72][73][74][75][76][77][78][79][80]. Owing to the ordered domain and large area coverage of SAMs, uniform and controllable doping was achieved.…”
Section: Sams As Dopantsmentioning
confidence: 99%
“… 21 Therefore, modifying the surface of graphene via doping with donor or acceptor chemical species is not only a simple and effective technique but also facilitates a significant change in the carrier concentration of graphene. 22 , 23 Graphene can be chemically doped by either substitution of carbon atoms with heteroatoms or sharing of charge between graphene and dopants. However, the former method is a destructive and stable doping approach, while charge transfer doping is a nondestructive method and preserves the intrinsic properties of graphene.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, a novel plasma doping technique has been studied for the improvement of chemical species reactivity in a graphene device. , Graphene is highly sensitive to surface dopants, as its sp 2 hybridized carbon atoms can easily react with the surrounding atmosphere . Therefore, modifying the surface of graphene via doping with donor or acceptor chemical species is not only a simple and effective technique but also facilitates a significant change in the carrier concentration of graphene. , Graphene can be chemically doped by either substitution of carbon atoms with heteroatoms or sharing of charge between graphene and dopants. However, the former method is a destructive and stable doping approach, while charge transfer doping is a nondestructive method and preserves the intrinsic properties of graphene.…”
Section: Introductionmentioning
confidence: 99%