This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for highpower, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm x 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm 2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25 o C and 11mOhm at 150 o C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buckboost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.

No abstract

This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.

Presented here is an explanation for the use of a commercial optical scanner for the mapping of doping density (ND) within SiC substrates and as a local probe for ND variations. This method provides a fast and cost effective method for determining ND homogeneity, examining local electrical characteristics, and recognizing defect sites including areas of different polytypes or polycrystallinity. Hall effect and micro-Raman spectroscopy were used to calibrate the transmission amplitude, integrated area and scanner red, green, blue (RGB) luminance values with ND. It is shown that features presented in the calculated ND maps strongly correlate to those observed in Lehighton resistivity maps.

No abstract

No abstract

No abstract

No abstract