This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.
The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.
This paper presents a study of performance and scalability of 8kV SiC PIN diodes focusing on area-dependent yield and sensitivity to material properties variation. Successfully fabricated 18 and 36 mm2 SiC-PiN diodes exhibited avalanche breakdown above 8 kV and < 5V forward voltage drop at 100 A/cm2 current density. The fast switching operation of these diodes up to ~5 kHz frequency is evidenced by reverse recovery measurements with by double-pulse inductive switching tests. The devices exhibit 0.142 and 0.169 uC/cm2 stored charge at room temperature and 125oC, respectively, when turned-off from Jf = 100A/cm2 to Vr = 2.1 kV. The measured diode breakdown voltage exhibited location and size dependent yield, indicating the necessity of material quality improvements for production.
Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175°C), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.
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