Getting the most from SiC MOSFETs: Optimizing conduction and switching losses for high performance power electronics applications

Matocha, Kevin; Losee, Peter A.; Glaser, John; Nasadoski, Jeff; Arthur, Steve; Stevanovic, Ljubisa

doi:10.1109/isdrs.2009.5378062

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer a substantial edge over silicon (Si) insulated-gate bipolar transistors (IGBTs), exhibiting a remarkable 2.86-fold reduction in switching losses across the same frequency range [8]. Furthermore, SiC MOSFETs boast not only lower switching losses but also reduced conduction losses compared to Si MOSFETs [9]. Theoretically, under equivalent withstand voltage, the drift layer resistance per unit area of SiC can be significantly diminished up to 300 times lower than Si [10].…”

Section: Introductionmentioning

confidence: 99%

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Huang,

Singh,

Liu

et al. 2024

Energies

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Silicon carbide (SiC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs) hold promising application prospects in future high-capacity high-power converters due to their excellent electrothermal characteristics. However, as nascent power electronic devices, their long-term operational reliability lacks sufficient field data. The power cycling test is an important experimental method to assess packaging-related reliability. In order to obtain data closest to actual working conditions, forward power cycling is utilized to carry out SiC MOSFET degradation experiments. Due to the wide bandgap characteristics of SiC MOSFETs, the short-term drift of the threshold voltage is much more serious than that of silicon (Si)-based devices. Therefore, an offline threshold voltage measurement circuit is implemented during power cycling tests to minimize errors arising from this short-term drift. Different characterizations are performed based on power cycling tests, focused on measuring the on-state resistance, thermal impedance, and threshold voltage of the devices. The findings reveal that the primary failure mode under forward power cycling tests, with a maximum junction temperature of 130 ∘C, is bond-wire degradation. Conversely, the solder layer and gate oxide exhibit minimal degradation tendencies under these conditions.

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Section: Introductionmentioning

confidence: 99%

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Huang,

Singh,

Liu

et al. 2024

Energies

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“…On the other hand, SiC unipolar devices, especially metal-oxide-semiconductor field-effect transistors (MOSFETs) have been attracting tremendous attention owing to their high speed switching operation and low on-resistance compared with Si bipolar devices. Discrete SiC MOSFETs have been developed by many institutes for middle-voltage classes from 600 to 2000 V. [9][10][11][12][13] Efficiency improvement and miniaturization of power inverters and converters by embedding SiC MOS-FETs have also been reported. [14][15][16][17][18] Furthermore, unipolar device technology has a potential to realize power devices with higher blocking voltages such as 3300 V, which are required for railway systems.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V

Hamada

Miura

Hino

et al. 2013

Jpn. J. Appl. Phys.

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We have investigated the effect of n-type doping into the junction field-effect transistor region (JFET doping) on the static characteristics of 3300-V-class 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). The JFET doping technique is significantly effective in reducing the on-resistance of SiC MOSFETs without degradation of the blocking characteristics when the MOS cells are properly designed. The JFET doping reduces the temperature coefficient of the resistance in the JFET region, leading to lower on-resistance of the SiC MOSFETs at high temperatures.

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Implementation of SiC inverter for high frequency, medium voltage applications

Sivkov

Novák

2014

Proceedings of the 16th International Conference on Mechatronics - Mechatronika 2014

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Getting the most from SiC MOSFETs: Optimizing conduction and switching losses for high performance power electronics applications

Cited by 3 publications

References 2 publications

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V

Implementation of SiC inverter for high frequency, medium voltage applications

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