This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for highpower, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm x 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm 2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25 o C and 11mOhm at 150 o C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buckboost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.
This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.
This paper presents a new method of constructing a transformerless, voltage-sourced, medium-voltage multilevel converter using existing discrete power semiconductor devices and printed circuit board technology. While the approach is general, it is particularly well-suited for medium-voltage converters and motor-drives in the 4.16 kV, 500 -1000 kW range. A novel way of visualizing the power stage topology is developed which allows simplified mechanical layouts while managing the commutation paths. Using so many discrete devices typically drives cost and complexity of the gate drive system including its control and isolation; a gate-drive circuit is presented to address this problem. As with most multilevel topologies, the dc-link voltages must be balanced during operation. This is accomplished using an auxiliary circuit made up of the same power stage and an associated control algorithm. Experimental results are presented for a 4.16 kV, 746 kW, five-level power converter prototype.
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