3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Bolotnikov, Alexander; Losee, Peter A.; Matocha, Kevin; Glaser, John; Nasadoski, Jefrey; Wang, Lei; Elasser, Ahmed; Arthur, Steve; Stum, Zachary; Sandvik, Peter; Yang, Sui; Johnson, Tammy; Sabate, Juan; Stevanovic, Ljubisa

doi:10.1109/ispsd.2012.6229103

Cited by 27 publications

(11 citation statements)

References 2 publications

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“…Their fundamental building block is the 4H-SiC crystalpolytype which exhibits the highest bulk mobility and offers the most mature epitaxial growth and processing technology beside the aforementioned advantages. SiC MOSFET devices have demonstrated their potential in terms of low power dissipation [9] and are now commercially available. Even for the 650 V voltage-class they challenge the established Si super-junction architecture [10].…”

Section: Motivationmentioning

confidence: 99%

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Rossmann

Bubendorf

Zanella³

et al. 2015

Microelectronic Engineering

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Section: Motivationmentioning

confidence: 99%

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Rossmann

Bubendorf

Zanella³

et al. 2015

Microelectronic Engineering

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“…2 shows the specific ON-resistance of various SiC switches in comparison with modern silicon devices. Of course, this is a simplified view as the devices [14,20,[24][25][26][27][28][29][30][31][32][33][34][35] NB: For the bipolar devices R ON A was calculated as the voltage drop at a nominal current density divided by the nominal current density For the references other than the indicated see [3] www.ietdl.org…”

Section: Conclusion On Sic-switchesmentioning

confidence: 99%

SiC and GaN devices – wide bandgap is not all the same

Kaminski

Hilt

2014

IET Circuits, Devices & Systems

110

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Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.

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“…Silicon Carbide (SiC) enables to develop high-voltage devices. While most of studies concern Power MOSFETs [1] [2], the present study focuses on JFETs because of it possible better robustness particularly in short-circuit operation [3]. The targeted JFET rating was selected to 3300 V, 20 A.…”

Section: Introductionmentioning

confidence: 99%

High-Voltage SiC-JFET Fabrication and Full Characterization

Asllani

Bevilacqua

Zaoui

et al. 2019

MSF

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3.3 kV Power JFETs have been designed, fabricated and measured in the framework of the FilSiC project. The paper presents the main characterization results with classical static and dynamic xmeasurements as well as double pulse tests for switching characterization. The study is completed by a data-sheet evaluation for the measured components and an evaluation of the associated safe operating area.

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3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Cited by 27 publications

References 2 publications

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

SiC and GaN devices – wide bandgap is not all the same

High-Voltage SiC-JFET Fabrication and Full Characterization

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