High-Voltage SiC-JFET Fabrication and Full Characterization

Asllani, Besar; Bevilacqua, Pascal; Zaoui, Abderrahime; Grosset, Grégory; Planson, Dominique; Morel, Hervé

doi:10.4028/www.scientific.net/msf.963.688

Cited by 1 publication

(3 citation statements)

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“…CHSAT P bi GS (20) the channel current is zero, in particular for 1   . Therefore, in the symmetric case, the classical condition of the blocking operation is expressed in the form of:…”

Section: Analysis and Modeling Of The Asymmetric Lateral Channel Of T...mentioning

confidence: 99%

“…Compared with the SiC MOSFET, SiC VJFET received a lot of attention because of its threshold voltage (V th ) stability for different temperature values, since no reliability issues appear with gate oxide on contrary to SiC MOSFETs [5][6][7]. Different structures of the SiC VJFET device have been developed and studied [16][17][18][19][20][21][22][23][24][25]. Among of them, in this paper, the SiC LC-VJFET of Figure 1 [16,20] is investigated under a physical model of the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

“…Different structures of the SiC VJFET device have been developed and studied [16][17][18][19][20][21][22][23][24][25]. Among of them, in this paper, the SiC LC-VJFET of Figure 1 [16,20] is investigated under a physical model of the threshold voltage. The SiC LC-VJFET has a normally-on behavior.…”

Section: Introductionmentioning

confidence: 99%

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Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

2021

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The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensively investigated. Motivated by the significant employment of the SiC Vertical Junction Field Effect transistors with lateral channel (LC-VJFET) in the development of high-voltage and high temperature applications, the properties of the LC-VJFET device are investigated in this work. The most important normally-ON LC-VJFET parameter is their threshold voltage (VTh), which is defined as the gate-to-source voltage necessary to block the device. The higher complexity of the blocking operation of the normally-ON device makes the accurate knowledge of the VTh as a fundamental issue. In this paper, a temperature dependent analytical model for the threshold voltage of the normally-ON LC-VJFET is developed. This analytical model is derived based on a numerical analysis of the electrical potential distribution along the asymmetrical lateral channel in the blocking operation. To validate our model, the analytical results are compared to 2D numerical simulations and experimental results for a wide temperature range.

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Section: Analysis and Modeling Of The Asymmetric Lateral Channel Of T...mentioning

confidence: 99%