Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion

Bolotnikov, Alexander; Muzykov, Peter G.; Греков, A.; Sudarshan, Tangali S.

doi:10.1109/ted.2007.896603

Cited by 19 publications

(12 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The complex impedance of CCTO/PC film samples was measured using an impedance analyzer (Agilent model 4192A LF) [51][52][53]. Measurements were carried out at fixed applied voltage (10 mV) and varying frequency (typically 10 2 to 1.2 9 10 7 Hz).…”

Section: Characterization Methodsmentioning

confidence: 99%

Dielectric properties and energy storage performance of CCTO/polycarbonate composites: influence of CCTO synthesis route

Islam

Chance

Loye

et al. 2014

J Sol-Gel Sci Technol

View full text Add to dashboard Cite

This work explores the effect of CaCu 3 Ti 4 O 12 (CCTO) synthetic route on CCTO/polycarbonate (PC) composite microstructure, low-field dielectric properties (e eff and tan d), and high-field polarization behavior. CCTO was synthesized via the traditional solid-state route and a wet chemical sol-gel route. PXRD, FE-SEM and BET analysis results show that sol-gel CCTO particles are 20 times smaller and have 20 times more surface area per gram than solid-state CCTO particles. Solution-blended 20 vol% sol-gel CCTO/PC composites have up to 12 times higher e eff values than PC. Surprisingly, the permittivity enhancement due to the smaller sol-gel CCTO particles is not much more than that found using the larger solid-state CCTO particles. Sol-gel CCTO/PC composites show higher dielectric loss and specific conductivity than solidstate CCTO/PC composites, probably due to the presence of polyethylene glycol added as a dispersant in sol-gel CCTO synthesis. The CCTO introduces ferroelectric behavior to the composites, including significant remanent polarization, hysteresis, and energy dissipation. The stored and recovered energy densities in CCTO/PC are up to five times higher than PC at the same applied electric field, but the percentage energy loss reaches 70 %. CCTO/PC composites also have greatly reduced breakdown field strength compared to PC, so the composites' maximum stored energy density is much less than that of PC. Thus CCTO/ PC composites are promising for applications requiring high e eff values at low field strengths, but not as dielectrics for high density, pulse power energy storage.

show abstract

Section: Characterization Methodsmentioning

confidence: 99%

Dielectric properties and energy storage performance of CCTO/polycarbonate composites: influence of CCTO synthesis route

Islam

Chance

Loye

et al. 2014

J Sol-Gel Sci Technol

View full text Add to dashboard Cite

show abstract

“…In spite of the significant research efforts invested by many groups, these carrier transport mechanisms are still not well understood. Several publications highlight on the change of ideality factor, forward voltage, relative light intensity, carrier lifetime and reverse recovery time of LEDs with temperature (Weling et al 2011;Acharya and Vyavahare 1999;Dalapati et al 2013;Bergman et al 1995;Chen et al 2012;Hull et al 2008;Bolotnikov et al 2007). These literatures show that the variations of these factors with temperature for different types of LED are not same.…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

2014

View full text Add to dashboard Cite

The high power light emitting diode (LED) based on AlGaInP is tested on line at temperatures from 350 to 77 K. The experimental data are fitted to measure the relationship between temperature and the ideality factor, the forward voltage, the relative light intensity emitted by the LED, the carrier lifetime and the reverse recovery time of the device. These results show that temperature has a significant influence on different properties of such LED. Finally, it is important to note that an optimization among the different parameter values, while some increasing and others decreasing with temperature change, as indicated in the present study, is essential and must be considered for design involving the device, particularly, for any low temperature application.

show abstract

“…For a long time, selective doping in SiC technology has been implemented mostly with ion implantation. Diffusion doping was considered to be impractical due to low diffusion coefficients of impurities at temperatures below 1800 • C, and the interest in diffusion in SiC was generally related to applications requiring "drive-in" annealing after implantation (see, e.g., [1][2][3]). Papers devoted to "classic" thermal diffusion in SiC were mostly limited to early years [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…Papers devoted to "classic" thermal diffusion in SiC were mostly limited to early years [4,5]. However, recent achievements in fabrication of SiC-based microelectronic devices using diffusion doping [1,2,6] stirred renewed interest in diffusion in SiC.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Mynbaeva

Pankratov

Мохов

et al. 2012

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.

show abstract

Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion

Cited by 19 publications

References 25 publications

Dielectric properties and energy storage performance of CCTO/polycarbonate composites: influence of CCTO synthesis route

Dielectric properties and energy storage performance of CCTO/polycarbonate composites: influence of CCTO synthesis route

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Contact Info

Product

Resources

About