Influence of temperature on the performance of high power AlGaInP based red light emitting diode

Dalapati, Pradip; Manik, Nabin Baran; Basu, A. N.

doi:10.1007/s11082-014-9980-5

Cited by 19 publications

(6 citation statements)

References 15 publications

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“…[ 4 ] Massive transfer requires the material to have good mechanical strength to avoid cracking during chip grabbing and placement, while the poor mechanical properties of AlGaInP material would add new difficulties to massive transfer. [ 5 ] Moreover, in terms of environmental protection, the phosphorus source used by AlGaInP in the growth process was highly toxic, [ 6 ] which was not suitable for the sustainable development strategy. Compared with the existing AlInGaP‐based red LED, InGaN‐based red LED has better mechanical stability and shorter hole diffusion length.…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Jia

Shen

Wang

2023

Physica Status Solidi (a)

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The carrier‐transport properties of InGaN red light‐emitting diode (LED) with V‐pits layer and step‐graded GaN barrier are investigated. By using V‐pits layer technology, the inverted pyramid–shaped V‐pit layer forms an energy barrier around the dislocation, inhibits the lateral diffusion of electrons from active layer to the dislocation center, and reduces the probability of non‐radiative recombination rate of electrons and holes. With the increase of the horizontal opening width of the V‐pits layer, the uniformity of holes concentration distribution in InGaN/GaN multiple quantum well (MQWs)‐active region is improved significantly. Compared with the traditional InGaN/GaN MQWs‐active region with fixed well/barrier thickness, step gradient GaN barrier is adopted in the active layer of InGaN red LED, which can reduce the length of the transmission path and improve the injection efficiency of holes into deep quantum wells close to the n‐type region. At injection current density of 200 A cm−2, the internal quantum efficiency of LED D with V‐pits layer and step‐graded GaN barrier is improved by 56.4% as compared with that of reference LED A. In addition, the efficiency droop of LED D can also be effectively alleviated as compared with that of reference LED A.

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Section: Introductionmentioning

confidence: 99%

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Jia

Shen

Wang

2023

Physica Status Solidi (a)

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“…SMD LED’s advantages include low operating conditions, less heat production, long life time and high brightness (Lin, 2003). InGaAlP Thinfilm low-power LEDs have a broad wavelength spectrum and used widely in various applications such as automotive lighting, traffic signals and color displays at different ambient temperatures (Dalapati et al , 2015). However, the lack of metal heat slug that transfers heat from junction to bottom side of LED causes rising in a temperature at junction.…”

Section: Introductionmentioning

confidence: 99%

Variation of thermal resistance with input current and ambient temperature in low-power SMD LED

Raypah

Dheepan

Devarajan

et al. 2018

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Purpose Thermal behavior of light-emitting diode (LED) device under different operating conditions must be known to enhance its reliability and efficiency in various applications. The purpose of this study is to report the influence of input current and ambient temperature on thermal resistance of InGaAlP low-power surface-mount device (SMD) LED. Design/methodology/approach Thermal parameters of the LED were measured using thermal transient measurement via Thermal Transient Tester (T3Ster). The experimental results were validated using computational fluid dynamics (CFD) software. Findings As input current increases from 50 to 90 mA at 25°C, the relative increase in LED package (ΔRthJS) and total thermal resistance (ΔRthJA) is about 10 and 4 per cent, respectively. In addition, at 50 mA and ambient temperature from 25 to 65°C, the ΔRthJS and ΔRthJA are roughly 28 and 22 per cent, respectively. A good agreement between simulation and experiment results of junction temperature. Originality/value Most of previous studies have focused on thermal management of high-power LEDs. There were no studies on thermal analysis of low-power SMD LED so far. This work will help in predicting the thermal performance of low-power LEDs in solid-state lighting applications.

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“…In addition, accelerated tests are generally used to determine reliability indexes of semiconductor devices. They force the aging processes and reduce the length of time required for obtaining the reliability information [12][13][14]. Generally, the accelerating factors arise from temperature and exaggeration of conditions.…”

Section: Introductionmentioning

confidence: 99%

Application of Radiation Technologies for Quality Improvement of LEDs Based upon AlGaAs

Градобоев¹,

Simonova²,

Orlova³

et al. 2018

Ionizing Radiation Effects and Applications

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The investigation results of the radiation resistance and reliability of light-emitting diodes (LEDs) based upon AlGaAs are presented. The radiation model and the reliability model are described for LEDs. Preliminary irradiation by gamma-quanta and fast neutrons makes it possible to improve the radiation resistance and reliability of the LEDs during further operation. Based on the developed models, radiation technologies are proposed, and the use of which allows increasing the service properties of the LEDs. The suggested technologies can be used for other types of semiconductor devices.

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Influence of temperature on the performance of high power AlGaInP based red light emitting diode

Cited by 19 publications

References 15 publications

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Variation of thermal resistance with input current and ambient temperature in low-power SMD LED

Application of Radiation Technologies for Quality Improvement of LEDs Based upon AlGaAs

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