Akira Tamakoshi scite author profile

A magnetic-tunnel-junction (MTJ)-based video coding hardware with an MTJ-write-error-rate relaxation scheme as well as a nonvolatile storage capacity reduction technique is designed and fabricated in a 90 nm MOS and 75 nm perpendicular MTJ process. The proposed MTJ-oriented dynamic error masking scheme suppresses the effect of write operation errors on the operation result of LSI, which results in the increase in an acceptable MTJ write error rate up to 7.8 times with less than 6% area overhead, while achieving 79% power reduction compared with that of the static-random-access-memory-based one.

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High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

Onizawa

Mukaida

Tamakoshi

et al. 2020

IEEE Trans. VLSI Syst.

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12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Natsui

Suzuki

Tamakoshi

et al. 2019

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Akira Tamakoshi

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

Sudden Power-Outage Resilient In-Processor Checkpointing for Energy-Harvesting Nonvolatile Processors

Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

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