High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

Onizawa, Naoya; Mukaida, Shogo; Tamakoshi, Akira; Yamagata, Hitoshi; Fujita, Hiroyuki; Hanyu, Takahiro

doi:10.1109/tvlsi.2020.3005413

Cited by 15 publications

(4 citation statements)

References 31 publications

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“…Recently, various studies have demonstrated the inherent post‐process random behaviors in emerging memory devices could serve as excellent entropy sources for TRNGs, such as the stochastic formation of conductive filaments in resistive random access memory (RRAM), and chaotic magnetization phenomenon at the bifurcation point in Magnetic tunnel junction (MTJ). [ 4–13 ] However, some TRNGs are still in the early stage, that they typically rely on the stochastic distribution with a reference value and are vulnerable to the fluctuation of devices between cycle‐to‐cycle (C2C) and device‐to‐device (D2D). [ 14–16 ] The TRNGs thus must be specially calibrated before or even during use, which is inefficient and impractical.…”

Section: Introductionmentioning

confidence: 99%

A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

et al. 2022

Adv Elect Materials

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True random number generators (TRNGs) that can generate unpredictable data by exploiting physical entropy sources are the main security primitive. Despite impressive demonstrations of TRNGs with various memories by exploiting their spatiotemporal variability, realizing efficient and reliable TRNGs without calibration remains a significant challenge. Diffusive memristors with rich stochastic switching behaviors offer an attractive alternative to designing efficient TRNGs, but they are still plagued by difficulties in improving device performance and inefficient circuit calibration. Here, the authors report a Ag/TiN/HfOx/HfOy/HfOx/Pt diffusive memristor with superior threshold switching characteristics, enabled by the good control of switching dynamics by introducing a TiN barrier and trilayer‐hafnia with different ion mobility and migrate barriers. The random integrate‐and‐fire behaviors of the memristor are exploited as excellent intrinsic entropy sources for random number generation with robustness to device variation and without extra calibration. Experimental measurements validate the highly stochastic, compact, self‐clocking TRNG design with a high throughput of ≈108 kb s‐1. The generated random bits have successfully passed all 15 National Institute of Standards and Technology randomness test benchmarks. This work demonstrates that high‐performance diffusive memristors can play an important role in hardware security electronics deployed in edge computing systems.

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Section: Introductionmentioning

confidence: 99%

A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

et al. 2022

Adv Elect Materials

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“…Conventionally, these devices are engineered to suppress the stochastic switching behavior as it poses reliability concerns and undeterministic behavior in memory applications. However, certain applications which demand stochastic behavior in their implementation, such as solvers for combinatorial optimization, stochastic neural networks etc., rely on true random number generators (TRNGs), which are extremely area-and power-expensive with CMOS circuits [15]- [17]. The stochastic behavior of MRAM devices leads to an efficient implementation of such TRNGs, and in this article, we briefly discuss the manifold applications which can be realized.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistive Circuits and Systems: Embedded Non-Volatile Memory to Crossbar Arrays

Agrawal

Wang

Sharma

et al. 2021

IEEE Trans. Circuits Syst. I

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This overview article describes Magnetoresistive Random Access Memory (MRAM) from a circuits and systems perspective. We discuss various tradeoffs and design challenges of MRAM in three broad application areas: 1) embedded nonvolatile memory (eNVMs), 2) crossbar-based analog in-memory computing, and 3) stochastic computing. Certain MRAM characteristics, such as high retention, high endurance and fast read and write operations, make them ideal for replacing the standard CMOS memories for last-level cache applications with future scaling. However, various tradeoffs in power, performance and area pose conflicting requirements on MRAM design. We explore these challenges and various circuit techniques that have been developed to mitigate them. Further, we present various requirements of memristive crossbar arrays for accelerating matrixvector-multiplication (MVM) operations in light of MRAM devices, and highlight various challenges, design considerations, and applicability of MRAM as crossbar arrays. Finally, we will elaborate on how inherent stochasticity of MRAM devices can be leveraged for implementing energy-efficient true random number generators (TRNGs) and stochastic units for performing certain tasks, such as developing fast solvers for combinatorial optimization, and stochastic neural networks.

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“…Spintronics devices offer several security aspects for applications in hardware security [3], [4], and other important applications [5], [6], [7]. MTJ is a widely investigated spintronic device and has been used for different hardware security primitives in recent research [8], [9], [10], [11], [12]. The use of emerging beyond CMOS devices for watermark generation currently needs to be well explored and thus provides many opportunities for utilizing the unique physical characteristic of such devices for generating watermark solutions.…”

mentioning

confidence: 99%

FSM Inspired Unconventional Hardware Watermark Using Field-Assisted SOT-MTJ

et al. 2023

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The globalization of the Integrated Circuits supply chain has increased threats from untrusted entities involved in the process. Several mechanisms, such as logic locking, watermarking and split manufacturing, are widely used to ensure hardware security. This study describes a novel method for creating hardware watermarks inspired by finite-state machines. It makes use of the unique physical property of magnetic tunnel junctions that are based on spin-orbit torque. The design strategy is described in detail, including the use of an EDA tool to analyze and take advantage of the unique switching properties of MTJ, their non-volatility, and their reliance on an external magnetic field to direct information through a predetermined order of states in a manner akin to an FSM. Furthermore, the performance prospects are analyzed using Monte Carlo simulations. For the 5% and 10% of process variation in the key MTJ parameters, the accuracy of 100% and 99.80%, respectively, are achieved. In control signal voltage variation, a tolerance of 9% (0.91V) is observed. The required state transition is not altered, demonstrating a tolerable sensitivity to temperature variation from 250K to 350K. The security aspects and methodology for the approach are explained to ensure a more robust and practical application, and finally, a comparison is made with other FSM-based watermarks.INDEX TERMS Hardware watermarks, hardware security, spintronics, spin-orbit torque (SOT), magnetic tunnel junction (MTJ), finite-state machine (FSM).

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High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

Cited by 15 publications

References 31 publications

A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

Magnetoresistive Circuits and Systems: Embedded Non-Volatile Memory to Crossbar Arrays

FSM Inspired Unconventional Hardware Watermark Using Field-Assisted SOT-MTJ

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High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

Cited by 15 publications

References 31 publications

A High‐Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

A High‐Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

Magnetoresistive Circuits and Systems: Embedded Non-Volatile Memory to Crossbar Arrays

FSM Inspired Unconventional Hardware Watermark Using Field-Assisted SOT-MTJ

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A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

A High‐Performance Ag/TiN/HfO_x/HfO_y/HfO_x/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator