Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.

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The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories.

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Current fluctuations with discrete levels, which are called random telegraph signals (RTSs), have been studied in small size metal-oxide-semiconductor field-effect transistors (MOSFETs) from both viewpoints of relative current change and of correlated switchings. A large relative current change of as much as 30% has been observed, even at room temperature. It behaves similarly as normal small RTSs in terms of statistics and temperature dependence. RTSs have been found also in 20-μm channel width MOSFETs. These results require another mechanism to explain RTSs in addition to simple Coulomb scattering or number fluctuation. It is emphasized that an interaction between defects at the Si/SiO2 interface is necessary to understand the correlated RTSs. The experimental results are reasonably reproduced by a model calculation assuming interacting defects. It is also pointed out that new RTSs generated by electrical stress might be a serious concern in lower submicron devices.

Inversion layer mobility in thin SO1 MOSFETs has been investigated from the viewpoint of the SO1 thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin Si02 regime.

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