Laser-Fabricated Reduced Graphene Oxide Memristors

Romero, Francisco J.; Toral‐Lopez, Alejandro; Ohata, Akiko; Morales, Diego P.; Ruiz, Francisco G.; Godoy, A.; Rodríguez, Noel

doi:10.3390/nano9060897

Cited by 57 publications

(64 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite this model may be only appropriate for partially reduced GO, this work commits memristance in GO to the creation of a percolation path of highly reduced GO by the energy accumulated in the device. This theory agrees with the prospective estimation of the energy scale of the phenomenon given in Romero et al (2019), and it is also supported by Times series Statistical Analysis (Rodriguez et al, 2019): the results thrown from the analysis of successive set and reset processes show that the autocorrelation and partial autocorrelation levels match those typically found in resistive switching due to a well-defined conductive path between the electrodes that it is interrupted at a Quantum Point Contact (Roldan et al, 2018).…”

Section: Oxidation-reduction Mechanisms In the Bulk Gosupporting

confidence: 83%

Resistive Switching in Graphene Oxide

et al. 2020

View full text Add to dashboard Cite

The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories.

show abstract

Section: Oxidation-reduction Mechanisms In the Bulk Gosupporting

confidence: 83%

Resistive Switching in Graphene Oxide

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Similar to the neurobiological architecture in the human brain, neuromorphic systems have artificial neurons acting as computing elements and synapses acting as memory elements. Resistive random access memory (RRAM) is being explored as one of the candidates [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ] to replicate the characteristics of a biological synapse. It has an advantage over phase-change memory [ 21 ] and ferroelectric memory [ 22 ], i.e., it has a low power consumption [ 23 , 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

Cho

Kim

2020

Nanomaterials

View full text Add to dashboard Cite

In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently, it is necessary to coordinate the information that needs to be processed with short-term memory. In neural networks, short-term memory can play the role of retaining the response on temporary spikes for information filtering. In this study, the proposed complementary metal-oxide-semiconductor (CMOS)-compatible synaptic device mimics the potentiation and depression with varying pulse conditions similar to biological synapses in the nervous system. Short-term memory dynamics are demonstrated through pulse modulation at a set pulse voltage of −3.5 V and pulse width of 10 ms and paired-pulsed facilitation. Moreover, spike-timing-dependent plasticity with the change in synaptic weight is performed by the time difference between the pre- and postsynaptic neurons. The SiOx layer as a tunnel barrier on a Si substrate provides highly nonlinear current-voltage (I–V) characteristics in a low-resistance state, which is suitable for high-density synapse arrays. The results herein presented confirm the viability of implementing a CMOS-compatible neuromorphic chip.

show abstract

“…In the case of the LrGO, the laser treatment on the surface of the GO leads to a partial restoration of the crystallographic network of its graphitic structure, which was disrupted during the oxidation process [43]. However, this partial recovery makes the surface of the resulting material to present structural defects manifested thorough a large roughness and a 3D plate-shape structure with multiple craters, a phenomenon that has been reported for both UV [44] and CO 2 lasers [45], and that could be helpful to increase their double layer capacitance effect. Raman and XPS spectroscopies confirmed the graphene-derived nature of these materials.…”

Section: Resultsmentioning

confidence: 91%

Comparison of Laser-Synthetized Nanographene-Based Electrodes for Flexible Supercapacitors

et al. 2020

View full text Add to dashboard Cite

In this paper, we present a comparative study of a cost-effective method for the mass fabrication of electrodes to be used in thin-film flexible supercapacitors. This technique is based on the laser-synthesis of graphene-based nanomaterials, specifically, laser-induced graphene and reduced graphene oxide. The synthesis of these materials was performed using two different lasers: a CO2 laser with an infrared wavelength of λ = 10.6 µm and a UV laser (λ = 405 nm). After the optimization of the parameters of both lasers for this purpose, the performance of these materials as bare electrodes for flexible supercapacitors was studied in a comparative way. The experiments showed that the electrodes synthetized with the low-cost UV laser compete well in terms of specific capacitance with those obtained with the CO2 laser, while the best performance is provided by the rGO electrodes fabricated with the CO2 laser. It has also been demonstrated that the degree of reduction achieved with the UV laser for the rGO patterns was not enough to provide a good interaction electrode-electrolyte. Finally, we proved that the specific capacitance achieved with the presented supercapacitors can be improved by modifying the in-planar structure, without compromising their performance, which, together with their compatibility with doping-techniques and surface treatments processes, shows the potential of this technology for the fabrication of future high-performance and inexpensive flexible supercapacitors.

show abstract

Laser-Fabricated Reduced Graphene Oxide Memristors

Cited by 57 publications

References 61 publications

Resistive Switching in Graphene Oxide

Resistive Switching in Graphene Oxide

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

Comparison of Laser-Synthetized Nanographene-Based Electrodes for Flexible Supercapacitors

Contact Info

Product

Resources

About