Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

Cho, Hyojong; Kim, Sungjun

doi:10.3390/nano10091821

Cited by 30 publications

(26 citation statements)

References 62 publications

(69 reference statements)

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“…This behavior occurred due to the instability of Cu ions in response to voltage. The dynamic range of the conductance was much smaller compared to the case of the full reset with high on/off ratio [34]. A similar result was reported in the interface type with small on/off ratio and the small dynamic range should be improved to obtain better performance as a neuromorphic device.…”

Section: Resultssupporting

confidence: 69%

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Kim¹,

Kwon²,

Ryu³

et al. 2021

Metals

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This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlOx/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.

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Section: Resultssupporting

confidence: 69%

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Kim¹,

Kwon²,

Ryu³

et al. 2021

Metals

Self Cite

View full text Add to dashboard Cite

show abstract

“…Although initially a gradual increase of the measured current values is recorded, during the application of high-frequency pre-synaptic signals (1 MHz), by reducing the frequency the current responses quickly decay (Figure 7a). This behavior is comparable with the memory forgetting pattern of the human brain and signifies the manifestation of the STP effect [44]. The respective relaxation times acquired through the fitting process are also compatible with this assumption (Figure 7b).…”

Section: Stp and Ltp Effectssupporting

confidence: 81%

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Bousoulas

Papakonstantinopoulos

Kitsios

et al. 2021

Micromachines

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The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.

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“…Emerging 2D materials have received more and more attention in the preparation of memristors due to their unique structures and properties, such as flexible and wearable devices, and neural networks [ 5 , 6 , 7 ]. Memory devices prepared with metal oxides [ 8 , 9 , 10 , 11 ], organic polymers [ 12 , 13 , 14 , 15 ], perovskites [ 16 , 17 , 18 , 19 ], and other materials as active layers still have major deficiencies in terms of sustainable use and biocompatibility. Therefore, RRAM devices, with their storage and logical computing functions, biocompatibility, and environmental friendliness, are needed to break the von Neumann bottleneck.…”

Section: Introductionmentioning

confidence: 99%

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

2021

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In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 104 s. After 104 bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.

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Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

Cited by 30 publications

References 62 publications

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

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