Resistive Switching in Graphene Oxide

Abstract

The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories.

Memristive Non-Volatile Memory Based on Graphene Materials

“…The I-V characteristic of the proposed compact model has high correlation with the experimental data [148,151]. A similar discussion mechanism of bulk GO was also supported by Romero et al [139], whose work mainly focused on different switching mechanisms of GO memristive devices.…”

“…Several studies reported that the main reason for RS performance in dielectric layers based on graphene and its derivatives, especially GO layers, is the diffusion of oxygen ions or vacancies [19,[134][135][136][137][138][139]. In general, the RS behavior and switching mechanism are influenced by the fabrication methods and hybridization state of graphene-based material dielectric layers, the deposition techniques of electrode layers, and the choice of TE and BE materials.…”

“…In addition to the two main switching mechanisms discussed above, a mechanism affected by GO-based bulk was also investigated. It is worth mentioning that Wah et al presented a compact model of hybridization state modulation for GO-RRAM, which is one of the most effective explanations for the bulk mechanism [28,139,[148][149][150]. The proposed model associates the resistance switching mechanism with the electrical-driven modification of sp 2 cluster density in the switching layer.…”

“…The HfO2 layer was fabricated by ALD, and the SLG layer was transferred onto the RS layer with oxygen plasma etching. In addition, some other research teams aimed at an investigation of the contacting relationship between the GRM layer and electrode layer or other RS layers, mainly related to single-layer graphene (SLG) or multi-layer graphene (MLG) interlayers applied in RRAM devices with metal-oxide (M-O) thin films [139,[152][153][154][155][156]. In the literature review, it is noteworthy that Chen et al presented a TiN/SLG/HfO 2 /Pt RRAM device with an SLG interlayer [152].…”

Observation of CCNR-type electrical switching in Zn0.3Mn0.7+xSixFe2−2xO4 spinel ferrite series

“…Very recent (2019-2020) review articles describe all the aspects, starting from fundamentals of resistive switching (RS), mechanisms responsible for switching action, fabrication processes, materials properties, etc., of resistive switching devices for nonvolatile RRAM and computing applications [1][2][3][4][5][6][7][8][9]. Many pure oxide thin film heterostructures, perovskite oxides, metal halide perovskite, manganites, single-crystalline materials, and thin films of chalcogenide semiconductors, organic and hybrid materials including graphene oxide have shown to exhibit resistive switching [1][2][3][4][5][6][7][8][9]. Mixed metal oxide systems such as ferrites (spinels, garnets, orthoferrites, etc.,) exhibiting memory and switching characteristics are of prime significance in the field of digital electronics.…”