Ni0 reacts with 1,3-butadienes to form octadienediyl-nickel complexes, which play an important role as key intermediates in the oligomerization of butadienes. [1,2] This reaction demonstrates extreme synthetic utility as a straightforward method for the formation of C 8 building blocks in organic synthesis. The cycloaddition of butadienes is one of the most successful transformations of this type. [1d, 3] However, many attempts toward the synthesis of functionalized oligomers (i.e. telomerization) by using Ni catalysts resulted in the formation of mixtures of products. [1b, 4] We have recently developed new methods for the regioselective addition of silicon and/or carbon functionalities to alkenes or dienes in the presence of early-transition-metal catalysts, such as zirconium complexes [5] and titanium complexes. [6] During the course of these studies, we found that Ni catalyzes the dimerization and carbosilylation of butadienes in the presence of chlorosilanes and Grignard reagents to give rise to 1,6-dienes with high regio-and stereoselectivity [Eq. (1)].When a catalytic amount of [Ni(acac) 2 ] (0.05 mmol; acac = acetylacetone) was added to a solution of isoprene (2 mmol), chlorotriethylsilane (1 mmol), and nBuMgCl (1.2 mmol) in THF (1.3 mL) at À20 8C, and the resulting mixture was stirred for a further 18 hours at the same temperature, compound 1, with Et 3 Si and nBu groups at positions 3 and 8 of its dimerized isoprene skeleton, was isolated in 87 % yield (E/Z = 76:24) from the crude mixture by HPLC, with CHCl 3 as the eluent ( (dppp = propane-1,

Ni0 reacts with 1,3-butadienes to form octadienediyl-nickel complexes, which play an important role as key intermediates in the oligomerization of butadienes. [1,2] This reaction demonstrates extreme synthetic utility as a straightforward method for the formation of C 8 building blocks in organic synthesis. The cycloaddition of butadienes is one of the most successful transformations of this type. [1d, 3] However, many attempts toward the synthesis of functionalized oligomers (i.e. telomerization) by using Ni catalysts resulted in the formation of mixtures of products. [1b, 4] We have recently developed new methods for the regioselective addition of silicon and/or carbon functionalities to alkenes or dienes in the presence of early-transition-metal catalysts, such as zirconium complexes [5] and titanium complexes. [6] During the course of these studies, we found that Ni catalyzes the dimerization and carbosilylation of butadienes in the presence of chlorosilanes and Grignard reagents to give rise to 1,6-dienes with high regio-and stereoselectivity [Eq. (1)].When a catalytic amount of [Ni(acac) 2 ] (0.05 mmol; acac = acetylacetone) was added to a solution of isoprene (2 mmol), chlorotriethylsilane (1 mmol), and nBuMgCl (1.2 mmol) in THF (1.3 mL) at À20 8C, and the resulting mixture was stirred for a further 18 hours at the same temperature, compound 1, with Et 3 Si and nBu groups at positions 3 and 8 of its dimerized isoprene skeleton, was isolated in 87 % yield (E/Z = 76:24) from the crude mixture by HPLC, with CHCl 3 as the eluent ( (dppp = propane-1,

We have developed a 736ppi (WQXGA) LCD which pixel density reach 4k smart-phone for the first time using oxide semiconductor. Utilizing the highly scalable channel etch type InGaZnO-TFT and a novel transparent contact structure, more than 50% of the aperture ratio was achieved using patterning dimensions of a manufacturing backplane.

An ultra-high resolution 513-ppi liquid crystal display with a narrow 1-mm bezel and an aperture ratio greater than 50 was fabricated. A highly reliable channel-etched c-axis aligned crystalline oxide semiconductor (CAAC-OS) was used in a backplane.

In a C‐axis aligned crystal (CAAC) IGZO TFT, contact between a CAAC‐IGZO film and source and drain electrode was good. In this study, we recognized the existence of n‐type IGZO layer serving as contact layer by a novel experimental method where a depth profile of the sheet resistance.

No abstract

We have established a technique for changing part of an active layer of an oxide semiconductor (OS) to a transparent electrode in order to achieve an aperture ratio of 50% or higher and a bezel width of 1 mm in an fringe field switching (FFS) mode LCD panel with a high resolution of 513 ppi. Furthermore, we have prototyped an LCD panel by examining a driving mode that enables low-frequency driving.

We have fabricated a 5.5‐inch 4K2K liquid crystal display (LCD) using an oxide semiconductor. The use of an oxide semiconductor layer of a high‐mobility indium‐rich material and a top‐gate structure enables fabrication of a 4K2K LCD with a narrow bezel and an integrated demultiplexer.