We prototyped a 6.0-in. color sequential XGA LCD using an oxide semiconductor. A color sequential LCD has lower power consumption than a color filter LCD because light use efficiency is better. We utilize the low I off of the oxide semiconductor and make frame rate lower, which leads to the lower power consumption of drivers. The color sequential LCD can have a monochrome electronic paper function with a white backlight on.
A prototype of an 8.34 inch, 1058 ppi 8K4K display is fabricated. This display shall use top-gate self-aligned-type crystalline oxide semiconductor field-effect transistors as the backplane, and will be the smallest 8K display in the world.
By using oxide semiconductors, we succeeded in prototyping a 3.4-inch QHD LCD panel whose aperture ratio is high and pixels do not include a storage capacitor. The aperture ratio is increased from 40 % to 59%, resulting in reduction of power consumption in a backlight unit.
We focused on the off-state current (I off ) of oxide semiconductor thin film transistors (TFT) (In-Ga-Zn-oxide TFTs), which is lower than that of amorphous silicon TFTs and successfully made a prototype of a 6.0-in. extended graphics array (XGA) reflective liquid crystal display (RLCD) panel integrally including a data selection demultiplexer and a scan driver and capable of displaying still images at 1/180 fps. When still images are displayed, the frame frequency can be set low. This means that the frequency of rewrites of image data is markedly reduced. This leads to the reduction in the power consumption of an LCD panel. Our panel can solve the problems of electronic paper displays: high drive voltage and difficulty of displaying moving images. Thus, our panel is suitable for electronic paper displays.
We fabricated a 1.50‐inch, 3207‐ppi OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking OSFETs over SiFETs. Taking advantages of minute OSFETs with a high withstand voltage, Si‐OS connection regions were provided in subpixels to connect Si drivers and OS pixel arrays at given positions.
In this paper, we fabricate a 1.50‐inch, 3207‐ppi prototype OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking CAAC‐OS FETs over SiFETs. This structure enables a narrow bezel and two‐dimensional driver arrangement, leading to independent driving of 32 pixel arrays with divided source and gate lines.
Using a WTC OLED device and a backplane using CAAC-OSFETs over a glass substrate employing the 1.5 m rule, we fabricated a 2.78-in 1058-ppi OLED display, the pixel density of which is the highest in the world among displays using thin film transistors over a glass substrate.
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