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The objective of this work is to simulate a single quantum well ultraviolet light emitting diode (LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm−1 eV−1, a maximum spontaneous emission of 3.34 × 1028 and 3.43 × 1028 s−1 cm−3 eV−1, and a maximum Light output power of 0.56 and 0.89 mW.

The aim of this study is to improve the DC and RF performance of a conventional AlGaN/GaN HEMT and to suppress the short-channel effects by adding a BGaN backbarrier layer under the channel which improves the electron confinement in the two-dimensional electron gas 2DEG. Using TCAD Silvaco, we simulate some DC and RF characteristics, we note that the use of only 5 nm BGaN back-barrier layer shows a remarkable improvement compared to a conventional HEMT of 35% in the maximum drain current, 30% in the transconductance, 13% in the cut off frequency and 12% in the maximum oscillation frequency.

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In this paper, we study a field plate high electron mobility transistor (FP-HEMT) device with Al2O3 passivation, InAlN/GaN lattice matched, and a gate of 30-nm length. We simulate its performances evaluation in function of the thermal effect mode. We also show the analysis and simulation of this device with the proposed equivalent circuit that consists of inter-electrode distributed extrinsic parasitic and additional intrinsic feedback. Then, a study on how it can be used in thermal environment for satellite application. The simulator Tcad-Silvaco software has been used to predict results of the characteristics specified with a genetic algorithm, to improve the computation time and model accuracy. The obtained results confirm the feasibility of using this new device model with InAlN thin barrier, Filip Chip and field plate at the same time and in one structure at high amplifier signal mode, as well as in a geostationary thermal orbital.