Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

Guenineche, Lotfi; Hamdoune, Abdelkader

doi:10.1088/2053-1591/3/5/055003

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…So far, the beneficial influence of BGaN backbarrier on AlGaN/GaN HEMTs due to the enhancement of the two-dimensional electron gas confinement has been reported. [1][2][3][4] Additionally, a decreased value of the refractive index for BGaN compared to GaN was reported, making the BGaN/GaN multilayer structures candidates for distributed Bragg reflectors. 5,6 BGaN alloys with specific B content are also thought to have a beneficial influence on GaN-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Zdanowicz

Iida

Pawlaczyk

et al. 2020

Journal of Applied Physics

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Since the BGaN alloy is considered a promising material in the wide range of optoelectronic applications, a detailed study of its band structure and optical properties is highly demanded. Here, B x Ga 1Àx N layers with 0.5%, 1.1%, and 1.2% B were grown by metalorganic vapor-phase epitaxy on AlN/sapphire templates and investigated by structural and optical methods. The bandgaps of the investigated alloys were examined by contactless electroreflectance (CER) spectroscopy. Because no GaN layer is present in the investigated samples, the detected CER resonances do not overlap with the GaN-related signal, which is typical for BGaN layers grown on GaN templates. Thus, the energy of the bandgap-related transition in BGaN samples can be unambiguously determined from the resonances observed in the CER spectra. The boron-induced redshift of the bandgap was determined to be about 60 meV/% B for the studied samples. By means of photoluminescence measurements, the deteriorating optical quality of samples with increasing boron content is shown as the decreasing bandgapto defect-related emission intensity ratio. What is more, the defect-related emission is shifted from typical for GaN yellow range to the red and is located at 1.9 eV for all BGaN samples.

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Section: Introductionmentioning

confidence: 99%

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Zdanowicz

Iida

Pawlaczyk

et al. 2020

Journal of Applied Physics

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“…The use of a BGaN back-barrier layer, the resistivity of the buffer layer under the channel increases and creates an electrostatic barrier, which prevents electron leakage from the channel to the substrate; then the drain current increases. 15 The transfer characteristic is shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

3D Simulation and Optimization of Characteristics of Al0.1Ga0.9N/In0.2Ga0.8N High Electron Mobility Transistor with B0.03Ga0.97N Back-Barrier Layer

Fz¹,

Hamdoune²

2021

Preprint

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The objective of this paper is to simulate the effect of a BGaN back-barrier on performances of a high electron mobility transistor (HEMT) based on AlGaN/InGaN, by using TCAD 3D Silvaco simulator. We simulate some DC and AC characteristics; we note that with only 60 nm BGaN back-barrier layer and 3% of boron in BGaN, HEMT shows improvement of 33.34% in the maximum drain current, 64.7 % in the transconductance, 19% in the threshold voltage, 50% the drain-induced barrier lowering, 34.67% in the subthreshold swing, 20% in the breakdown voltage, 10.18% in the cut-off frequency, 12% in the maximum oscillation frequency, and record high ION/IOFF of over 1012.9.

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“…Nowadays the mainstream schemes for fabricating E-mode HEMTs include recessed-gate [7,8], fluorinated-gate [9,10] and p-GaN gate [11][12][13]. However, the recessed-gate HEMTs suffer from either low threshold voltage (V th ) or large on-resistance (R on ) [14], and the fluorinated-gate HEMTs encounter stability issues at high temperature [15] the introduction of BAlN and BGaN interlayers leads to considerable enhancement of the 2DEG sheet density and reduction of electron leakage [16,17]. The p-GaN gate scheme, which is currently favored by the industry, also faces several issues such as narrow gate operating voltage range and limited switching frequency.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*

Sun,

Dai,

Huang

et al. 2024

Semicond. Sci. Technol.

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In this work, the p-n junction vertical gate (JVG) and polarization junction vertical gate (PVG) structures are for the first time proposed to improve the performances of GaN-based enhancement-mode (E-mode) HEMT devices. Compared with the control group featuring the vertical gate structure, highly improved threshold voltage (Vth) and breakdown voltage (BV) are achieved with the assistance of the extended depletion regions formed by inserting single or composite interlayers. The structure dimensions and physical parameters for device interlayers are optimized by TCAD simulation to adjust the spatial electric field distribution and hence improve the device off-state characteristics. The optimal JVG-HEMT device can reach a Vth of 3.4 V, a low on-state resistance (Ron) of 0.64 mΩ·cm2, and a BV of 1245 V, while the PVG-HEMT device exhibits a Vth of 3.7 V, a Ron of 0.65 mΩ·cm2, and a BV of 1184 V, which could be further boosted when additional field plate design is employed. Thus, the figure-of-merit value of JVG- and PVG-HEMT devices rise to 2.4 and 2.2 GW/cm2, respectively, much higher than that for VG-HEMT control group (1.0 GW/cm2). The work provides a novel technical approach to realize higher-performance E-mode HEMTs.

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Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

Cited by 7 publications

References 5 publications

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

3D Simulation and Optimization of Characteristics of Al0.1Ga0.9N/In0.2Ga0.8N High Electron Mobility Transistor with B0.03Ga0.97N Back-Barrier Layer

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*

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