Improvement of DC and RF performances of an AlGaN/GaN HEMT by a B<inf>0.01</inf>Ga<inf>0.99</inf>N back-barrier simulation study

Abstract

The aim of this study is to improve the DC and RF performance of a conventional AlGaN/GaN HEMT and to suppress the short-channel effects by adding a BGaN backbarrier layer under the channel which improves the electron confinement in the two-dimensional electron gas 2DEG. Using TCAD Silvaco, we simulate some DC and RF characteristics, we note that the use of only 5 nm BGaN back-barrier layer shows a remarkable improvement compared to a conventional HEMT of 35% in the maximum drain current, 30% in the transconductance, 13% in the cut off frequency and 12% in the maximum oscillation frequency.

Impact of boron in ultraviolet quantum well-based light emitting diodes

“…Boron nitride (BN) emerges as a highly encouraging prospect for the years ahead, attributing its potential to a host of extraordinary properties including elevated electrical conductivity under high temperatures, impressive mechanical resilience, substantial chemical stability, and broad-spectrum optical transparency. The concept of harnessing these attributes has prompted the introduction of B(Al, Ga, In)N alloys [14]. Conversely, integrating boron into AlGaN alloy compositions presents a promising avenue for tackling lattice mismatch issues with GaN.…”