Abstract:In this paper, we study a field plate high electron mobility transistor (FP-HEMT) device with Al2O3 passivation, InAlN/GaN lattice matched, and a gate of 30-nm length. We simulate its performances evaluation in function of the thermal effect mode. We also show the analysis and simulation of this device with the proposed equivalent circuit that consists of inter-electrode distributed extrinsic parasitic and additional intrinsic feedback. Then, a study on how it can be used in thermal environment for satellite a… Show more
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