Simulation and optimization of a tandem solar cell based on InGaN

Boudaoud, Chahrazad; Hamdoune, Abdelkader; Allam, Zehor

doi:10.1016/j.matcom.2018.09.007

Cited by 15 publications

(10 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It increases rapidly when the thickness of the absorber reaches the diffusion length (>5 μm) because of photons whose energy is higher than the absorber's bandgap. It can be used to establish a relation between J SC and V co [ 24 ] as follows

V_{co} = \frac{n K T}{q} ln (\frac{J_{SC}}{J_{normalS}} + 1)

…”

Section: Resultsmentioning

confidence: 99%

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer

Allam

Boudaoud

Soufi

et al. 2022

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Herein, a CuInSe2 thin film solar cell with an intrinsic thin layer (HIT) is modeled and simulated using SCAPS. The HIT is deposited between a thin CdS window layer of reduced thickness of 20 nm to minimize cadmium toxicity and an absorbing layer of variable thickness. The aim is to study the influence of the thickness of absorber and HIT layer, level doping and defect densities of CuInSe2 layer, and high work function (between 5 and 5.6 eV) effect on performance parameters of the solar cell. In general, a significant increase in efficiency is observed. The HIT and the absorber thicknesses are optimized to be 0.3 and 0.5 μm, respectively. A conversion efficiency of 24.2%, a V oc of 0.78 V, J sc of 45.4 mA cm−2, and an FF of 68.3% are obtained for the proposed AZO/ZnO/CdS/CuInSe2/Mo/glass. These simulation results encourage using intrinsic thin layers in CIS solar cell structure.

show abstract

V_{co} = \frac{n K T}{q} ln (\frac{J_{SC}}{J_{normalS}} + 1)

…”

Section: Resultsmentioning

confidence: 99%

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer

Allam

Boudaoud

Soufi

et al. 2022

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…5,13,17 In solar cells, this feature is also relevant to enable the utilization of a wider range of the solar emission spectrum to generate electricity. [6][7][8][9] Moreover, the high value predicted (4400 -14000 cm 2 V -1 s -1 ) [18][19][20] and experimentally measured (3640-4850 cm 2 V −1 s −1 ) 12,21 for electron mobility constitute a key property for the future use in electronic devices.…”

Section: -Introductionmentioning

confidence: 94%

“…Tables 1 and 2 summarize the thermokinetic data obtained for the reaction pathways described previously by Eq. (7)(8)(9)(10)(11)(12)(13)(14), as calculated at p= 1 bar and different temperature conditions. In Subsection 2.1.1, it is first discussed the choice of theory level for the theoretical calculations.…”

Section: 1-trimethylindiummentioning

confidence: 99%

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Damas¹,

Rönnby

Pedersen

et al. 2023

Preprint

View full text Add to dashboard Cite

Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition (ALD) techniques have been previously employed for InN growth at low temperatures (typically < 350 C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favour the precursor decomposition in gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in gas phase, namely trimethylindium (TMI) and tris(N,N-diisopropyl-2-dimethylamido-guanidinato) (III) (ITG), by means of thermodynamic and kinetic modelling. According to the results, at T= 593 K, TMI should exhibit partial decomposition of ~8% after 400 s to first generate methylindium (MI) and ethane (C2H6), a percentage that increases to ~34% after 1 hour of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition experiment (< 10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler and it will slowly decompose as it is evaporated during the deposition process. At T= 300 C, the decomposition is a fast process that reaches 90% completeness after 1 s, and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors.

show abstract

“…In this study, the solar power conversion efficiency of In0.2Ga0.8N based tandem solar cells was investigated. With this intention, the effects of the most important parameters such as emitter thickness, base thickness, emitter dopant density, base dopant and antireflection coating on the performance of solar cells were studied [8,9]. PC1D software has been chosen as a simulation tool for this research regarding its advantages, simplicity and its userfriendly system [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Abed¹,

Naim²,

Djelloul³

et al. 2022

View full text Add to dashboard Cite

The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.

show abstract

Simulation and optimization of a tandem solar cell based on InGaN

Cited by 15 publications

References 14 publications

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Contact Info

Product

Resources

About

Simulation and optimization of a tandem solar cell based on InGaN

Cited by 15 publications

References 14 publications

Numerical Study of CiS Solar Cell with CuInSe2‐Undoped Layer

Numerical Study of CiS Solar Cell with CuInSe2‐Undoped Layer

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Contact Info

Product

Resources

About

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer

Numerical Study of CiS Solar Cell with CuInSe₂‐Undoped Layer