Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Abstract

The objective of this work is to simulate a single quantum well ultraviolet light emitting diode (LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm−1 eV−1, a maximum spontaneous emission of 3.34 × 1028 and 3.43 × 1028 s−1 cm−3 eV−1, and a maximum Light output power of 0.56 and 0.89 mW.

Theoretical Study of the Performance and Efficiency Droop of a ZnO‐Based Multiquantum Well Light‐Emitting Diode

“…However, they show some drawbacks including very low external quantum efficiency, expensive raw materials, and complicated fabrication routs. [1,2] The exciton binding energy of ZnO (60 meV) is higher than that of GaN (24 meV), hence ZnO-based LEDs have grater radiative recombination rate than that of GaN-based LEDs. Both GaN and ZnO possess the hexagonal wurtzite structure, but large single crystal of ZnO can be fabricated more easily.…”

“…Nevertheless, almost all reports on the ZnO-based LEDs consider p-type ZnO layer as one of the constituent components of the modeled device. [1,[3][4][5] This results in favorable outputs in the calculation, but the story is quite different in practice. As a solution, some authors have utilized p-NiO for ZnO-based photodiodes.…”