The effect of various substrate preparation techniques is investigated in the vapor growth of germanium on Ge, Si, and
normalGaAs
substrates. Important differences are noted for substrates which are iodine etched in situ, chemically etched, and cleaved in situ; namely, the appearance and crystal perfection of the overgrowth as well as epitaxial junction properties, all improve in the order of the above procedures. Flat, structureless overgrowths on cleaved
normalGaAs
substrates and growths with negligible stacking fault densities and dislocation densities of approximately 106 cm−2 on cleaved germanium substrates are obtained. However, strain and cracking of the overgrowth, in addition to higher defect densities occur in germanium grown on cleaved silicon substrates.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.